Vishay Intertechnology, Inc. 8V 2A MOSFET Transistor SI1489EDH-T1-GE3

MOSFET P-CH 8V 2A SOT-363 Product overview: SI1489EDH-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8V, 2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 8V, 2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1489EDH-T1-GE3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Win Source Part Number: 109257-SI1489EDH-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.56W (Ta), 2.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-363
Dimension: 6-TSSOP, SC-88, SOT-363
Drain-Source Breakdown Voltage: 8V
Continuous Drain Current at 25°C: 2A (Tc)
Gate-Source Threshold Voltage: 700mV @ 250μA
Max Gate Charge: 16nC @ 4.5V
Maximum Gate-Source Voltage: ±5V
Maximum Rds On at Id,Vgs: 48 mOhm @ 3A, 4.5V
Alternative Parts (Cross-Reference): Si1499DH-T1-E3;
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance

P-Channel 8V 2A (Tc) 2.8W (Tc) Surface Mount SC-70-6