Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1488DH-T1-GE3 SI1488DH-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 1095700-SI1488DH-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 (SOT-363) Dimension: 6-TSSOP, SC-88, SOT-363 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6.1A (Tc) Gate-Source Threshold Voltage: 950mV @ 250μA Max Gate Charge: 10nC @ 4.5V Max Input Capacitance: 530pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 49 mOhm @ 4.6A, 4.5V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Vishay Win Source Part Number: 1095700-SI1488DH-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 (SOT-363) Dimension: 6-TSSOP, SC-88, SOT-363 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6.1A (Tc) Gate-Source Threshold Voltage: 950mV @ 250μA Max Gate Charge: 10nC @ 4.5V Max Input Capacitance: 530pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 49 mOhm @ 4.6A, 4.5V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Sufficient
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1488DH-T1-GE3 - 1095700-SI1488DH-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1488DH-T1-GE3
1095700-SI1488DH-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1488DH-T1-GE3 1095700-SI1488DH-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1095700-SI1488DH-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 (SOT-363) Dimension: 6-TSSOP, SC-88, SOT-363 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 6.1A (Tc) Gate-Source Threshold Voltage: 950mV @ 250μA Max Gate Charge: 10nC @ 4.5V Max Input Capacitance: 530pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 49 mOhm @ 4.6A, 4.5V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 1095700-SI1488DH-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 1.5W (Ta), 2.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6 (SOT-363)
Dimension: 6-TSSOP, SC-88, SOT-363
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 6.1A (Tc)
Gate-Source Threshold Voltage: 950mV @ 250μA
Max Gate Charge: 10nC @ 4.5V
Max Input Capacitance: 530pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 49 mOhm @ 4.6A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Singapore
20V 4.6A MOSFET Transistor
278-SI1488DH-T1-GE3
20V 4.6A MOSFET Transistor 278-SI1488DH-T1-GE3
Trans Mosfet N-ch 20V 4.6A 6-PIN SC-70 T/r Product overview: SI1488DH-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1488DH-T1-GE3 can be used for catalog matching and distributor lookup.

Trans Mosfet N-ch 20V 4.6A 6-PIN SC-70 T/r Product overview: SI1488DH-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 4.6A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 4.6A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1488DH-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD.
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1095700-SI1488DH-T1-GE3 278-SI1488DH-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1488DH-T1-GE3 20V 4.6A MOSFET Transistor
Polarity N-Channel; N-Channel
V(BR)DSS 20 volts
PD 1500 to 2800 milliwatts 2800 milliwatts
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