Vishay Intertechnology, Inc. 20V 6.1A MOSFET Transistor SI1488DH-T1-E3

MOSFET N-CH 20V 6.1A SC70-6 Product overview: SI1488DH-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 6.1A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 6.1A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1488DH-T1-E3 can be used for catalog matching and distributor lookup.

N-Channel 20V 6.1A (Tc) 1.5W (Ta), 2.8W (Tc) Surface Mount SC-70-6

Manufacturer: Vishay Siliconix
Win Source Part Number: 720320-SI1488DH-T1-E3
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET
Transistor Polarity: N-Channel
Categories: Discrete Semiconductor Products
Supplier Device Package: SC-70-6 (SOT-363)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: 6-TSSOP, SC-88, SOT-363
Power Dissipation (Maximum): 1.5W, 2.8W
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited
Manufacturer Pack Quantity: 1
MSL Level: 1 (Unlimited)
Vds - Drain-Source Breakdown Voltage: 20V
Id - Continuous Drain Current: 6.1A
Rds On (Maximum) at Id, Vgs: 49mOhm at 4.6A, 4.5V
Gate Source Voltage(th) (Maximum) at Id: 950mV at 250μA
Gate Charge (Qg) (Maximum) at Vgs: 10nC at 5V
Gate Source Voltage (Maximum): ±8V
Input Capacitance (Ciss) (Maximum) at Vds: 530pF at 10V