Vishay Precision Group TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1473DH-T1-GE3 SI1473DH-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 1095699-SI1473DH-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 (SOT-363) Dimension: 6-TSSOP, SC-88, SOT-363 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.7A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 6.2nC @ 4.5V Max Input Capacitance: 365pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 1095699-SI1473DH-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 (SOT-363) Dimension: 6-TSSOP, SC-88, SOT-363 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.7A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 6.2nC @ 4.5V Max Input Capacitance: 365pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1473DH-T1-GE3 - 1095699-SI1473DH-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1473DH-T1-GE3
1095699-SI1473DH-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1473DH-T1-GE3 1095699-SI1473DH-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1095699-SI1473DH-T1- GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 (SOT-363) Dimension: 6-TSSOP, SC-88, SOT-363 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 2.7A (Tc) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 6.2nC @ 4.5V Max Input Capacitance: 365pF @ 15V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 100 mOhm @ 2A, 10V Popularity: Medium Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 1095699-SI1473DH-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.5W (Ta), 2.78W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6 (SOT-363)
Dimension: 6-TSSOP, SC-88, SOT-363
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 2.7A (Tc)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 6.2nC @ 4.5V
Max Input Capacitance: 365pF @ 15V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 100 mOhm @ 2A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - SI1473DH-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI1473DH-T1-GE3TR-ND
Single FETs, MOSFETs SI1473DH-T1-GE3TR-ND
P-Channel 30V 2.7A (Tc) 1.5W (Ta), 2.78W (Tc) Surface Mount SC-70-6

P-Channel 30V 2.7A (Tc) 1.5W (Ta), 2.78W (Tc) Surface Mount SC-70-6

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI1473DH-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI1473DH-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI1473DH-T1-GE3
MOSFET P-CH 30V 2.7A SC70-6

MOSFET P-CH 30V 2.7A SC70-6

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 1095699-SI1473DH-T1-GE3 SI1473DH-T1-GE3TR-ND SI1473DH-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1473DH-T1-GE3 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 30 volts
PD 1500 to 2780 milliwatts
Unlock Full Specs
to access all available technical data