P-CH MOSFET, -30V, -4A, 54mR, SOT-363 Product overview: SI1443EDH-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include -30V, -4A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, -30V, -4A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1443EDH-T1-GE3
MOSFET P-CH 30V 4A SOT-363
P-Channel 30V 4A (Tc) 1.6W (Ta), 2.8W (Tc) Surface Mount SC-70-6
P-Channel 30V 4A (Tc) 1.6W (Ta), 2.8W (Tc) Surface Mount SC-70-6
P-Channel 30V 4A (Tc) 1.6W (Ta), 2.8W (Tc) Surface Mount SC-70-6
Manufacturer: Vishay
Win Source Part Number: 1095694-SI1443EDH-T1
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-363
Dimension: 6-TSSOP, SC-88, SOT-363
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 4A (Tc)
Gate-Source Threshold Voltage: 1.5V @ 250μA
Max Gate Charge: 28nC @ 10V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 54 mOhm @ 4.3A, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Limited
MOSFET -30V Vds 12V Vgs SC70-6
MOSFET, P-CH, -30V, -4A, SOT-363-6, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:600mVRoHS Compliant: Yes
MOSFET, P-CH, -30V, -4A, SOT-363-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):0.043ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1.5V; Power RoHS Compliant: Yes
MOSFET, P CHANNEL, -30V, -4A, SOT-363-6; Transistor Polarity:P Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:4A; On Resistance Rds(on):0.043ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes
30V 4A 54mΩ@4.3A,10V 1.5V@250uA P Channel SOT-363-6 MOSFETs ROHS
MOSFET P-CH 30V 4A SOT-363
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SI1443EDH-T1-GE3 | SI1443EDH-T1-GE3 | SI1443EDH-T1-GE3TR-ND | 1095694-SI1443EDH-T1-GE3 | SI1443EDH-T1-GE3 | 99W9594 | 43AC4022 | 04X9748 | SI1443EDH-T1-GE3 | SI1443EDH-T1-GE3 |
| Product Name | -30V -4A MOSFET Transistor | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1443EDH-T1-GE3 | MOSFET | Mosfet, P-Ch, -30V, -4A, Sot-363-6, Full Reel; Channel Type Vishay | Mosfet, P-Ch, -30V, -4A, Sot-363-6; Transistor Polarity Vishay | Mosfet, P Channel, -30V, -4A, Sot-363-6; Transistor Polarity Vishay | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | ||||
| PD | 2800 milliwatts | 1600 milliwatts | 1600 to 2800 milliwatts | 1600 milliwatts | ||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||||
| V(BR)DSS | 30 volts | 30 volts | 30 volts |
