Vishay Precision Group Single FETs, MOSFETs SI1441EDH-T1-GE3

Description
P-Channel 20V 4A (Tc) 2.8W (Tc) Surface Mount SC-70-6
Request a Quote Datasheet
Description
P-Channel 20V 4A (Tc) 2.8W (Tc) Surface Mount SC-70-6
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - SI1441EDH-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI1441EDH-T1-GE3DKR-ND
Single FETs, MOSFETs SI1441EDH-T1-GE3DKR-ND
P-Channel 20V 4A (Tc) 2.8W (Tc) Surface Mount SC-70-6

P-Channel 20V 4A (Tc) 2.8W (Tc) Surface Mount SC-70-6

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Single FETs, MOSFETs - SI1441EDH-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI1441EDH-T1-GE3CT-ND
Single FETs, MOSFETs SI1441EDH-T1-GE3CT-ND
P-Channel 20V 4A (Tc) 2.8W (Tc) Surface Mount SC-70-6

P-Channel 20V 4A (Tc) 2.8W (Tc) Surface Mount SC-70-6

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Single FETs, MOSFETs - SI1441EDH-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI1441EDH-T1-GE3TR-ND
Single FETs, MOSFETs SI1441EDH-T1-GE3TR-ND
P-Channel 20V 4A (Tc) 2.8W (Tc) Surface Mount SC-70-6

P-Channel 20V 4A (Tc) 2.8W (Tc) Surface Mount SC-70-6

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1441EDH-T1-GE3 - 1095692-SI1441EDH-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1441EDH-T1-GE3
1095692-SI1441EDH-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1441EDH-T1-GE3 1095692-SI1441EDH-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1095692-SI1441EDH-T1 -GE3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SOT-363 Dimension: 6-TSSOP, SC-88, SOT-363 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 4A (Tc) Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 33nC @ 8V Maximum Gate-Source Voltage: ±10V Maximum Rds On at Id,Vgs: 41 mOhm @ 5A, 4.5V Popularity: Medium Fake Threat In the Open Market: 63 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 1095692-SI1441EDH-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1.6W (Ta), 2.8W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SOT-363
Dimension: 6-TSSOP, SC-88, SOT-363
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 4A (Tc)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 33nC @ 8V
Maximum Gate-Source Voltage: ±10V
Maximum Rds On at Id,Vgs: 41 mOhm @ 5A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 63 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Singapore, Singapore
P-Channel MOSFET Transistor
278-SI1441EDH-T1-GE3
P-Channel MOSFET Transistor 278-SI1441EDH-T1-GE3
P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel Product overview: SI1441EDH-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1441EDH-T1-GE3 can be used for catalog matching and distributor lookup.

P-CHANNEL 20-V (D-S) MOSFET - Tape and Reel Product overview: SI1441EDH-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1441EDH-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
MOSFET -20V Vds 10V Vgs SC70-6

MOSFET -20V Vds 10V Vgs SC70-6

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Single FETs, MOSFETs - SI1441EDH-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI1441EDH-T1-GE3
Single FETs, MOSFETs SI1441EDH-T1-GE3
MOSFET P-CH 20V 4A SOT-363

MOSFET P-CH 20V 4A SOT-363

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI1441EDH-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI1441EDH-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI1441EDH-T1-GE3
MOSFET P-CH 20V 4A SOT-363

MOSFET P-CH 20V 4A SOT-363

Supplier's Site
Mosfet, P Channel, -20V, -4A, Sot-363-6; Channel Type Vishay - 04X9746 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P Channel, -20V, -4A, Sot-363-6; Channel Type Vishay
04X9746
Mosfet, P Channel, -20V, -4A, Sot-363-6; Channel Type Vishay 04X9746
MOSFET, P CHANNEL, -20V, -4A, SOT-363-6; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400mV RoHS Compliant: Yes

MOSFET, P CHANNEL, -20V, -4A, SOT-363-6; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400mV RoHS Compliant: Yes

Supplier's Site Datasheet
Mosfet, P-Ch, 20V, 4A, Sot-363 Rohs Compliant Vishay - 57AJ0425 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, 20V, 4A, Sot-363 Rohs Compliant Vishay
57AJ0425
Mosfet, P-Ch, 20V, 4A, Sot-363 Rohs Compliant Vishay 57AJ0425
MOSFET, P-CH, 20V, 4A, SOT-363 ROHS COMPLIANT: YES

MOSFET, P-CH, 20V, 4A, SOT-363 ROHS COMPLIANT: YES

Supplier's Site
Mosfet, P-Ch, -20V, -4A, Sot-363-6; Channel Type Vishay - 65T1684 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, P-Ch, -20V, -4A, Sot-363-6; Channel Type Vishay
65T1684
Mosfet, P-Ch, -20V, -4A, Sot-363-6; Channel Type Vishay 65T1684
MOSFET, P-CH, -20V, -4A, SOT-363-6; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400mV RoHS Compliant: Yes

MOSFET, P-CH, -20V, -4A, SOT-363-6; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:4A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:400mV RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. VAST STOCK CO., LIMITED ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited Newark, An Avnet Company Newark, An Avnet Company Newark, An Avnet Company
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI1441EDH-T1-GE3DKR-ND 1095692-SI1441EDH-T1-GE3 278-SI1441EDH-T1-GE3 SI1441EDH-T1-GE3 SI1441EDH-T1-GE3 SI1441EDH-T1-GE3 04X9746 57AJ0425 65T1684
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1441EDH-T1-GE3 P-Channel MOSFET Transistor MOSFET Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Mosfet, P Channel, -20V, -4A, Sot-363-6; Channel Type Vishay Mosfet, P-Ch, 20V, 4A, Sot-363 Rohs Compliant Vishay Mosfet, P-Ch, -20V, -4A, Sot-363-6; Channel Type Vishay
Polarity P-Channel P-Channel; P-Channel P-Channel P-Channel; P-Channel P-Channel
Package Type 6-TSSOP, SC-88, SOT-363 SOT3; SOT-363 6-TSSOP, SC-88, SOT-363 6-TSSOP, SC-88, SOT-363 TO-3; SOT3 TO-3; SOT3 TO-3; SOT3
V(BR)DSS 20 volts 20 volts
PD 1600 to 2800 milliwatts 2800 milliwatts 2800 milliwatts
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