Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1417EDH-T1-E3 SI1417EDH-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 028346-SI1417EDH-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1W (Ta) Family Name: Si1417EDH Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 (SOT-363) Dimension: 6-TSSOP, SC-88, SOT-363 Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 2.7A (Ta) Gate-Source Threshold Voltage: 450mV @ 250μA (Min) Max Gate Charge: 8nC @ 4.5V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 85 mOhm @ 3.3A, 4.5V Alternative Parts (Cross-Reference): NTGS3433T1G; CPH6337-TL-E; CPH6337-TL-W; MCH6320-TL-E; Introduction Date: February 26, 2001 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 028346-SI1417EDH-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1W (Ta) Family Name: Si1417EDH Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 (SOT-363) Dimension: 6-TSSOP, SC-88, SOT-363 Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 2.7A (Ta) Gate-Source Threshold Voltage: 450mV @ 250μA (Min) Max Gate Charge: 8nC @ 4.5V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 85 mOhm @ 3.3A, 4.5V Alternative Parts (Cross-Reference): NTGS3433T1G; CPH6337-TL-E; CPH6337-TL-W; MCH6320-TL-E; Introduction Date: February 26, 2001 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1417EDH-T1-E3 - 028346-SI1417EDH-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1417EDH-T1-E3
028346-SI1417EDH-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1417EDH-T1-E3 028346-SI1417EDH-T1-E3
Manufacturer: Vishay Win Source Part Number: 028346-SI1417EDH-T1- E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 1W (Ta) Family Name: Si1417EDH Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-6 (SOT-363) Dimension: 6-TSSOP, SC-88, SOT-363 Drain-Source Breakdown Voltage: 12V Continuous Drain Current at 25°C: 2.7A (Ta) Gate-Source Threshold Voltage: 450mV @ 250μA (Min) Max Gate Charge: 8nC @ 4.5V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 85 mOhm @ 3.3A, 4.5V Alternative Parts (Cross-Reference): NTGS3433T1G; CPH6337-TL-E; CPH6337-TL-W; MCH6320-TL-E; Introduction Date: February 26, 2001 ECCN: EAR99 Country of Origin: China Estimated EOL Date: Obsolete / End of life Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 028346-SI1417EDH-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 1W (Ta)
Family Name: Si1417EDH
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-6 (SOT-363)
Dimension: 6-TSSOP, SC-88, SOT-363
Drain-Source Breakdown Voltage: 12V
Continuous Drain Current at 25°C: 2.7A (Ta)
Gate-Source Threshold Voltage: 450mV @ 250μA (Min)
Max Gate Charge: 8nC @ 4.5V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 85 mOhm @ 3.3A, 4.5V
Alternative Parts (Cross-Reference): NTGS3433T1G; CPH6337-TL-E; CPH6337-TL-W; MCH6320-TL-E;
Introduction Date: February 26, 2001
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
12V 2.7A MOSFET Transistor
278-SI1417EDH-T1-E3
12V 2.7A MOSFET Transistor 278-SI1417EDH-T1-E3
MOSFET P-CH 12V 2.7A SC70-6 Product overview: SI1417EDH-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 2.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 2.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1417EDH-T1-E3 can be used for catalog matching and distributor lookup.

MOSFET P-CH 12V 2.7A SC70-6 Product overview: SI1417EDH-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 2.7A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 2.7A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1417EDH-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI1417EDH-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI1417EDH-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI1417EDH-T1-E3
MOSFET P-CH 12V 2.7A SC70-6

MOSFET P-CH 12V 2.7A SC70-6

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 028346-SI1417EDH-T1-E3 278-SI1417EDH-T1-E3 SI1417EDH-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1417EDH-T1-E3 12V 2.7A MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel
V(BR)DSS 12 volts
PD 1000 milliwatts 1000 milliwatts
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