Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1413DH-T1 SI1413DH-T1

Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1092774-SI1413DH-T1 Mounting: SMD (SMT) Power Dissipation: 1 W Number of Pins: 6 Rise Time: 32 ns Fall Time: 32 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOT-363-6 Popularity: Low Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Continuous Drain Current (ID): 2.3 A Drain to Source Breakdown Voltage: 20 V Turn-Off Delay Time: 34 ns Drain to Source Resistance: 220 mΩ Gate to Source Voltage (Vgs): 8 V
Request a Quote
Description
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1092774-SI1413DH-T1 Mounting: SMD (SMT) Power Dissipation: 1 W Number of Pins: 6 Rise Time: 32 ns Fall Time: 32 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOT-363-6 Popularity: Low Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Continuous Drain Current (ID): 2.3 A Drain to Source Breakdown Voltage: 20 V Turn-Off Delay Time: 34 ns Drain to Source Resistance: 220 mΩ Gate to Source Voltage (Vgs): 8 V
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1413DH-T1 - 1092774-SI1413DH-T1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1413DH-T1
1092774-SI1413DH-T1
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1413DH-T1 1092774-SI1413DH-T1
Manufacturer: Vishay Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1092774-SI1413DH-T1 Mounting: SMD (SMT) Power Dissipation: 1 W Number of Pins: 6 Rise Time: 32 ns Fall Time: 32 ns Categories: Transistors - FETs, MOSFETs - RF Case / Package: SOT-363-6 Popularity: Low Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C RoHS: Compliant Min Operating Temperature: -55 °C Element Configuration: Single Continuous Drain Current (ID): 2.3 A Drain to Source Breakdown Voltage: 20 V Turn-Off Delay Time: 34 ns Drain to Source Resistance: 220 mΩ Gate to Source Voltage (Vgs): 8 V

Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1092774-SI1413DH-T1
Mounting: SMD (SMT)
Power Dissipation: 1 W
Number of Pins: 6
Rise Time: 32 ns
Fall Time: 32 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: SOT-363-6
Popularity: Low
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
RoHS: Compliant
Min Operating Temperature: -55 °C
Element Configuration: Single
Continuous Drain Current (ID): 2.3 A
Drain to Source Breakdown Voltage: 20 V
Turn-Off Delay Time: 34 ns
Drain to Source Resistance: 220 mΩ
Gate to Source Voltage (Vgs): 8 V

Buy Now

Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 1092774-SI1413DH-T1
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1413DH-T1
Package Type SOT3; SOT-363-6
Unlock Full Specs
to access all available technical data

Similar Products

IGBT - 167775880 - Radwell International
Fuji Electric Corp. of America
Specs
Transistor Type IGBT
View Details
DC - 3.5 GHz, 100 Watt, 28 V GaN RF Power Transistor - TGF2929-FL - Qorvo
Specs
Transistor Technology / Material GaN
Package Type NI-360
Transistor Grade / Operating Range Military
View Details
4 suppliers
CSD18504Q5A 40V, N-Channel NexFET? Power MOSFET - CSD18504Q5AT - Texas Instruments
Specs
Transistor Type Power-MOSFET
Polarity N-Channel
Package Type SON5x6
View Details
7 suppliers