Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1410EDH-T1 SI1410EDH-T1

Manufacturer: Vishay
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1092773-SI1410EDH-T1
Mounting: SMD (SMT)
Drain to Source Voltage (Vdss): 20 V
Power Dissipation: 1.56 W
Weight: 7.512624 mg
Number of Channels: 1
Number of Pins: 6
Rise Time: 400 ns
Fall Time: 400 ns
Categories: Transistors - FETs, MOSFETs - RF
Case / Package: SOT-363-6
Alternative Parts (Cross-Reference): SI1410EDH-T1SI1410EDHT1;
Popularity: Low
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
RoHS: Non-Compliant
Min Operating Temperature: -55 °C
Element Configuration: Single
Max Power Dissipation: 1.56 W
Turn-On Delay Time: 150 ns
Continuous Drain Current (ID): 3.7 A
Drain to Source Breakdown Voltage: 20 V
Turn-Off Delay Time: 1.9 µs
Drain to Source Resistance: 70 mΩ
Gate to Source Voltage (Vgs): 12 V

Mosfet N-ch 20V 2.9A SC70-6 Product overview: SI1410EDH-T1 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 2.9A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 2.9A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SI1410EDH-T1 can be used for catalog matching and distributor lookup.