Manufacturer: Vishay
Win Source Part Number: 028342-SI1330EDL-T1-
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 280mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-3
Dimension: SC-70, SOT-323
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 240mA (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 0.6nC @ 4.5V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 2.5 Ohm @ 250mA, 10V
Alternative Parts (Cross-Reference): DMN62D0LFB-7; Si1330EDL-E3; Si1330EDL-T1-E3; Si1330EDL;
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Sufficient
N-Channel 60V 240mA (Ta) 280mW (Ta) Surface Mount SC-70-3
N-Channel 60V 240mA (Ta) 280mW (Ta) Surface Mount SC-70-3
N-Channel 60V 240mA (Ta) 280mW (Ta) Surface Mount SC-70-3
MOSFET, N CHANNEL, 60V, 240mA, SOT-323-3; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:240mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
N CHANNEL MOSFET, 60V, 250mA, SC-70, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:250mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Power Dissipation:280mW RoHS Compliant: Yes
60V 240mA 2.5Ω@10V,250mA 280mW 2.5V@250uA N Channel SC-70-3 MOSFETs ROHS
MOSFET N-CH 60V 240MA SC70-3
MOSFET 60V Vds 20V Vgs SC70-3
| Win Source Electronics | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | LCSC Electronics Technology (HK) Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 028342-SI1330EDL-T1-E3 | SI1330EDL-T1-E3CT-ND | 69W7174 | 51K6944 | SI1330EDL-T1-E3 | SI1330EDL-T1-E3 | SI1330EDL-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1330EDL-T1-E3 | Single FETs, MOSFETs | Mosfet, N Channel, 60V, 240Ma, Sot-323-3; Channel Type Vishay | N Channel Mosfet, 60V, 250Ma, Sc-70, Full Reel; Channel Type Vishay | Triode/MOS Tube/Transistor >> MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | ||
| V(BR)DSS | 60 volts | 60 volts | |||||
| PD | 280 milliwatts | 280 milliwatts | 280 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3; SOT323; SC-70-3 | SOT323; SC-70, SOT-323 | TO-3; SOT3; SOT323 | TO-3 | Surface Mount |
