Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1305DL-T1-E3 SI1305DL-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 097472-SI1305DL-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 290mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-3 Dimension: SC-70, SOT-323 Drain-Source Breakdown Voltage: 8V Continuous Drain Current at 25°C: 860mA (Ta) Gate-Source Threshold Voltage: 450mV @ 250μA (Min) Max Gate Charge: 4nC @ 4.5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 280 mOhm @ 1A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Vishay Win Source Part Number: 097472-SI1305DL-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 290mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-3 Dimension: SC-70, SOT-323 Drain-Source Breakdown Voltage: 8V Continuous Drain Current at 25°C: 860mA (Ta) Gate-Source Threshold Voltage: 450mV @ 250μA (Min) Max Gate Charge: 4nC @ 4.5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 280 mOhm @ 1A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1305DL-T1-E3 - 097472-SI1305DL-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1305DL-T1-E3
097472-SI1305DL-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1305DL-T1-E3 097472-SI1305DL-T1-E3
Manufacturer: Vishay Win Source Part Number: 097472-SI1305DL-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 290mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-3 Dimension: SC-70, SOT-323 Drain-Source Breakdown Voltage: 8V Continuous Drain Current at 25°C: 860mA (Ta) Gate-Source Threshold Voltage: 450mV @ 250μA (Min) Max Gate Charge: 4nC @ 4.5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 280 mOhm @ 1A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 59 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 097472-SI1305DL-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 290mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-3
Dimension: SC-70, SOT-323
Drain-Source Breakdown Voltage: 8V
Continuous Drain Current at 25°C: 860mA (Ta)
Gate-Source Threshold Voltage: 450mV @ 250μA (Min)
Max Gate Charge: 4nC @ 4.5V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 280 mOhm @ 1A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 59 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - SI1305DL-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI1305DL-T1-E3TR-ND
Single FETs, MOSFETs SI1305DL-T1-E3TR-ND
P-Channel 8V 860mA (Ta) 290mW (Ta) Surface Mount SC-70-3

P-Channel 8V 860mA (Ta) 290mW (Ta) Surface Mount SC-70-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI1305DL-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI1305DL-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI1305DL-T1-E3
MOSFET P-CH 8V 860MA SC70-3

MOSFET P-CH 8V 860MA SC70-3

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 097472-SI1305DL-T1-E3 SI1305DL-T1-E3TR-ND SI1305DL-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1305DL-T1-E3 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 8 volts
PD 290 milliwatts
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