Vishay Intertechnology, Inc. 30V 600MA MOSFET Transistor SI1302DL-T1-GE3

MOSFET N-CH 30V 600MA SC-70-3 Product overview: SI1302DL-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 600MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 600MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1302DL-T1-GE3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Win Source Part Number: 122618-SI1302DL-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 280mW (Ta)
Family Name: Si1302DL
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-3
Dimension: SC-70, SOT-323
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 600mA (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 1.4nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 480 mOhm @ 600mA, 10V
Alternative Parts (Cross-Reference): PMF400UN; PMF400UN,115; RTF015N03TL; 2SK1586-T1-AZ;
Introduction Date: October 24, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited

N-Channel 30V 600mA (Ta) 280mW (Ta) Surface Mount SC-70-3

N-Channel 30V 600mA (Ta) 280mW (Ta) Surface Mount SC-70-3

N-Channel 30V 600mA (Ta) 280mW (Ta) Surface Mount SC-70-3