Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1302DL-T1-GE3 SI1302DL-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 122618-SI1302DL-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 280mW (Ta) Family Name: Si1302DL Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-3 Dimension: SC-70, SOT-323 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 600mA (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 1.4nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 480 mOhm @ 600mA, 10V Alternative Parts (Cross-Reference): PMF400UN; PMF400UN,115; RTF015N03TL; 2SK1586-T1-AZ; Introduction Date: October 24, 2000 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Vishay Win Source Part Number: 122618-SI1302DL-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 280mW (Ta) Family Name: Si1302DL Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-3 Dimension: SC-70, SOT-323 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 600mA (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 1.4nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 480 mOhm @ 600mA, 10V Alternative Parts (Cross-Reference): PMF400UN; PMF400UN,115; RTF015N03TL; 2SK1586-T1-AZ; Introduction Date: October 24, 2000 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1302DL-T1-GE3 - 122618-SI1302DL-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1302DL-T1-GE3
122618-SI1302DL-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1302DL-T1-GE3 122618-SI1302DL-T1-GE3
Manufacturer: Vishay Win Source Part Number: 122618-SI1302DL-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 280mW (Ta) Family Name: Si1302DL Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-70-3 Dimension: SC-70, SOT-323 Drain-Source Breakdown Voltage: 30V Continuous Drain Current at 25°C: 600mA (Ta) Gate-Source Threshold Voltage: 3V @ 250μA Max Gate Charge: 1.4nC @ 10V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 480 mOhm @ 600mA, 10V Alternative Parts (Cross-Reference): PMF400UN; PMF400UN,115; RTF015N03TL; 2SK1586-T1-AZ; Introduction Date: October 24, 2000 ECCN: EAR99 Country of Origin: China Estimated EOL Date: 2027 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 122618-SI1302DL-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 280mW (Ta)
Family Name: Si1302DL
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-3
Dimension: SC-70, SOT-323
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 600mA (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 1.4nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 480 mOhm @ 600mA, 10V
Alternative Parts (Cross-Reference): PMF400UN; PMF400UN,115; RTF015N03TL; 2SK1586-T1-AZ;
Introduction Date: October 24, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - SI1302DL-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI1302DL-T1-GE3
Single FETs, MOSFETs SI1302DL-T1-GE3
MOSFET N-CH 30V 600MA SC70-3

MOSFET N-CH 30V 600MA SC70-3

Supplier's Site Datasheet
Singapore
30V 600MA MOSFET Transistor
278-SI1302DL-T1-GE3
30V 600MA MOSFET Transistor 278-SI1302DL-T1-GE3
MOSFET N-CH 30V 600MA SC-70-3 Product overview: SI1302DL-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 600MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 600MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1302DL-T1-GE3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 30V 600MA SC-70-3 Product overview: SI1302DL-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 600MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 600MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1302DL-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SI1302DL-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI1302DL-T1-GE3DKR-ND
Single FETs, MOSFETs SI1302DL-T1-GE3DKR-ND
N-Channel 30V 600mA (Ta) 280mW (Ta) Surface Mount SC-70-3

N-Channel 30V 600mA (Ta) 280mW (Ta) Surface Mount SC-70-3

Buy Now Datasheet
Single FETs, MOSFETs - SI1302DL-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI1302DL-T1-GE3TR-ND
Single FETs, MOSFETs SI1302DL-T1-GE3TR-ND
N-Channel 30V 600mA (Ta) 280mW (Ta) Surface Mount SC-70-3

N-Channel 30V 600mA (Ta) 280mW (Ta) Surface Mount SC-70-3

Buy Now Datasheet
Single FETs, MOSFETs - SI1302DL-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI1302DL-T1-GE3CT-ND
Single FETs, MOSFETs SI1302DL-T1-GE3CT-ND
N-Channel 30V 600mA (Ta) 280mW (Ta) Surface Mount SC-70-3

N-Channel 30V 600mA (Ta) 280mW (Ta) Surface Mount SC-70-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI1302DL-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI1302DL-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI1302DL-T1-GE3
MOSFET N-CH 30V 600MA SC70-3

MOSFET N-CH 30V 600MA SC70-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 30V Vds 20V Vgs SC70-3

MOSFET 30V Vds 20V Vgs SC70-3

Buy Now Datasheet
Mosfet, N-Ch, 30V, 0.6A, Sc-70 Rohs Compliant Vishay - 57AJ0423 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, N-Ch, 30V, 0.6A, Sc-70 Rohs Compliant Vishay
57AJ0423
Mosfet, N-Ch, 30V, 0.6A, Sc-70 Rohs Compliant Vishay 57AJ0423
MOSFET, N-CH, 30V, 0.6A, SC-70 ROHS COMPLIANT: YES

MOSFET, N-CH, 30V, 0.6A, SC-70 ROHS COMPLIANT: YES

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 122618-SI1302DL-T1-GE3 SI1302DL-T1-GE3 278-SI1302DL-T1-GE3 SI1302DL-T1-GE3DKR-ND SI1302DL-T1-GE3 SI1302DL-T1-GE3 57AJ0423
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1302DL-T1-GE3 Single FETs, MOSFETs 30V 600MA MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET Mosfet, N-Ch, 30V, 0.6A, Sc-70 Rohs Compliant Vishay
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel
V(BR)DSS 30 volts 30 volts
PD 280 milliwatts 280 milliwatts 280 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F)
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