Manufacturer: Vishay
Win Source Part Number: 122618-SI1302DL-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 280mW (Ta)
Family Name: Si1302DL
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-3
Dimension: SC-70, SOT-323
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 600mA (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 1.4nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 480 mOhm @ 600mA, 10V
Alternative Parts (Cross-Reference): PMF400UN; PMF400UN,115; RTF015N03TL; 2SK1586-T1-AZ;
Introduction Date: October 24, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
MOSFET N-CH 30V 600MA SC70-3
MOSFET N-CH 30V 600MA SC-70-3 Product overview: SI1302DL-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 30V, 600MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 30V, 600MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1302DL-T1-GE3 can be used for catalog matching and distributor lookup.
N-Channel 30V 600mA (Ta) 280mW (Ta) Surface Mount SC-70-3
N-Channel 30V 600mA (Ta) 280mW (Ta) Surface Mount SC-70-3
N-Channel 30V 600mA (Ta) 280mW (Ta) Surface Mount SC-70-3
MOSFET N-CH 30V 600MA SC70-3
MOSFET 30V Vds 20V Vgs SC70-3
MOSFET, N-CH, 30V, 0.6A, SC-70 ROHS COMPLIANT: YES
| Win Source Electronics | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 122618-SI1302DL-T1-GE3 | SI1302DL-T1-GE3 | 278-SI1302DL-T1-GE3 | SI1302DL-T1-GE3DKR-ND | SI1302DL-T1-GE3 | SI1302DL-T1-GE3 | 57AJ0423 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1302DL-T1-GE3 | Single FETs, MOSFETs | 30V 600MA MOSFET Transistor | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET | Mosfet, N-Ch, 30V, 0.6A, Sc-70 Rohs Compliant Vishay |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | |||
| V(BR)DSS | 30 volts | 30 volts | |||||
| PD | 280 milliwatts | 280 milliwatts | 280 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |
