MOSFET N-CH 30V 600MA SC70-3
Manufacturer: Vishay
Win Source Part Number: 028340-SI1302DL-T1-E
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 280mW (Ta)
Family Name: Si1302DL
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-70-3
Dimension: SC-70, SOT-323
Drain-Source Breakdown Voltage: 30V
Continuous Drain Current at 25°C: 600mA (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 1.4nC @ 10V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 480 mOhm @ 600mA, 10V
Alternative Parts (Cross-Reference): 2SK1586; 2SK1586-T2-AZ; 2SK1586-A; 2SK1586-T1;
Introduction Date: October 24, 2000
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited
N-Channel 30V 600mA (Ta) 280mW (Ta) Surface Mount SC-70-3
N-Channel 30V 600mA (Ta) 280mW (Ta) Surface Mount SC-70-3
N-Channel 30V 600mA (Ta) 280mW (Ta) Surface Mount SC-70-3
N CHANNEL MOSFET, 30V, 640mA, SC-70; Channel Type:N Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:640mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET, N, 3-SC-70; Transistor Polarity:N Channel; Continuous Drain Current Id:640mA; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.41ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:1V; Power Dissipation Pd:310mW; RoHS Compliant: Yes
MOSFET N-CH 30V 600MA SC70-3
| ODG (Origin Data Global) | Win Source Electronics | RS Components, Ltd. | RS Components, Ltd. | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | SI1302DL-T1-E3 | 028340-SI1302DL-T1-E3 | 6556795 | 6556795P | SI1302DL-T1-E3CT-ND | 65K1914 | 61M9759 | SI1302DL-T1-E3 | SI1302DL-T1-E3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1302DL-T1-E3 | MOSFETs | MOSFETs | Single FETs, MOSFETs | N Channel Mosfet, 30V, 640Ma, Sc-70; Channel Type Vishay | Mosfet, N, 3-Sc-70; Transistor Polarity Vishay | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||
| V(BR)DSS | 30 volts | 30 volts | |||||||
| IDSS | 600 milliamps | 640 milliamps | 640 milliamps | ||||||
| PD | 280 milliwatts | 280 milliwatts | 310 milliwatts |
