Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1071X-T1-GE3 SI1071X-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 1095674-SI1071X-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 236mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-89-6 Dimension: SOT-563, SOT-666 Drain-Source Breakdown Voltage: 30V Gate-Source Threshold Voltage: 1.45V @ 250μA Max Gate Charge: 13.3nC @ 10V Max Input Capacitance: 315pF @ 15V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 167 mOhm @ 960mA, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
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Description
Manufacturer: Vishay Win Source Part Number: 1095674-SI1071X-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 236mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-89-6 Dimension: SOT-563, SOT-666 Drain-Source Breakdown Voltage: 30V Gate-Source Threshold Voltage: 1.45V @ 250μA Max Gate Charge: 13.3nC @ 10V Max Input Capacitance: 315pF @ 15V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 167 mOhm @ 960mA, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1071X-T1-GE3 - 1095674-SI1071X-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1071X-T1-GE3
1095674-SI1071X-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1071X-T1-GE3 1095674-SI1071X-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1095674-SI1071X-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 236mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-89-6 Dimension: SOT-563, SOT-666 Drain-Source Breakdown Voltage: 30V Gate-Source Threshold Voltage: 1.45V @ 250μA Max Gate Charge: 13.3nC @ 10V Max Input Capacitance: 315pF @ 15V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 167 mOhm @ 960mA, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Balance Quantity per package: 3k pcs

Manufacturer: Vishay
Win Source Part Number: 1095674-SI1071X-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 236mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-89-6
Dimension: SOT-563, SOT-666
Drain-Source Breakdown Voltage: 30V
Gate-Source Threshold Voltage: 1.45V @ 250μA
Max Gate Charge: 13.3nC @ 10V
Max Input Capacitance: 315pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 167 mOhm @ 960mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Balance
Quantity per package: 3k pcs

Buy Now Datasheet
Single FETs, MOSFETs - SI1071X-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI1071X-T1-GE3TR-ND
Single FETs, MOSFETs SI1071X-T1-GE3TR-ND
P-Channel 30V 960mA (Ta) 236mW (Ta) Surface Mount SC-89 (SOT-563F)

P-Channel 30V 960mA (Ta) 236mW (Ta) Surface Mount SC-89 (SOT-563F)

Buy Now Datasheet
MOSFET P-CH 30V 0.96A SC89-6 - 880-SI1071X-T1-GE3 - Utmel Electronic Limited
Hong Kong, China
MOSFET P-CH 30V 0.96A SC89-6
880-SI1071X-T1-GE3
MOSFET P-CH 30V 0.96A SC89-6 880-SI1071X-T1-GE3
MOSFET P-CH 30V 0.96A SC89-6

MOSFET P-CH 30V 0.96A SC89-6

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI1071X-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI1071X-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI1071X-T1-GE3
MOSFET P-CH 30V 0.96A SC89-6

MOSFET P-CH 30V 0.96A SC89-6

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1095674-SI1071X-T1-GE3 SI1071X-T1-GE3TR-ND 880-SI1071X-T1-GE3 SI1071X-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1071X-T1-GE3 Single FETs, MOSFETs MOSFET P-CH 30V 0.96A SC89-6 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel; P-Channel P-Channel
V(BR)DSS 30 volts 30 volts
PD 236 milliwatts 236 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3; SC-89-6 SOT-563, SOT-666 SOT-563, SOT-666
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