Vishay Intertechnology, Inc. Single FETs, MOSFETs SI1070X-T1-E3

Description
N-Channel 30V 1.2A (Ta) 236mW (Ta) Surface Mount SC-89 (SOT-563F)
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Description
N-Channel 30V 1.2A (Ta) 236mW (Ta) Surface Mount SC-89 (SOT-563F)
Request a Quote Datasheet

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Single FETs, MOSFETs - SI1070X-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI1070X-T1-E3TR-ND
Single FETs, MOSFETs SI1070X-T1-E3TR-ND
N-Channel 30V 1.2A (Ta) 236mW (Ta) Surface Mount SC-89 (SOT-563F)

N-Channel 30V 1.2A (Ta) 236mW (Ta) Surface Mount SC-89 (SOT-563F)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1070X-T1-E3 - 130228-SI1070X-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1070X-T1-E3
130228-SI1070X-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1070X-T1-E3 130228-SI1070X-T1-E3
Manufacturer: Vishay Win Source Part Number: 130228-SI1070X-T1-E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 236mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-89-6 Dimension: SOT-563, SOT-666 Drain-Source Breakdown Voltage: 30V Gate-Source Threshold Voltage: 1.55V @ 250μA Max Gate Charge: 8.3nC @ 5V Max Input Capacitance: 385pF @ 15V Maximum Gate-Source Voltage: ±12V Maximum Rds On at Id,Vgs: 99 mOhm @ 1.2A, 4.5V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Limited

Manufacturer: Vishay
Win Source Part Number: 130228-SI1070X-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 236mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-89-6
Dimension: SOT-563, SOT-666
Drain-Source Breakdown Voltage: 30V
Gate-Source Threshold Voltage: 1.55V @ 250μA
Max Gate Charge: 8.3nC @ 5V
Max Input Capacitance: 385pF @ 15V
Maximum Gate-Source Voltage: ±12V
Maximum Rds On at Id,Vgs: 99 mOhm @ 1.2A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI1070X-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI1070X-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI1070X-T1-E3
MOSFET N-CH 30V 1.2A SC89-6

MOSFET N-CH 30V 1.2A SC89-6

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI1070X-T1-E3TR-ND 130228-SI1070X-T1-E3 SI1070X-T1-E3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1070X-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type SOT-563, SOT-666 SOT3; SC-89-6 SOT-563, SOT-666
V(BR)DSS 30 volts
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