The Si1069X is a P-channel MOSFET designed for load switching in portable devices, housed in an SC-89 (6-lead) package. It has a drain-source voltage rating of -20 V and a continuous drain current of -0.94 A at 25 °C, decreasing to -0.75 A at 70 °C. The on-state resistance is 0.184 Ω at -4.5 V gate-source bias and 0.268 Ω at -2.5 V. The device features a total gate charge of 4.23 nC and complies with RoHS Directive 2002/95/EC and is halogen-free per IEC 61249-2-21. It operates within a junction and storage temperature range of -55 °C to 150 °C.
Win Source Part Number: 1277497-SI1069X-T1-E
Category: Discrete Semiconductor Products>Transistors
Series: TrenchFET®
Package: Tape & Reel (TR)
Standard Package: 3,000
Mounting: SMD (SMT)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 20 V
Current - Continuous Drain (Id) @ 25°C: 970mA (Ta)
Rds On (Max) @ Id, Vgs: 184mOhm @ 940mA, 4.5V
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 236mW (Ta)
Package / Case: SOT-563, SOT-666
Supplier Device Package: SC-89 (SOT-563F)
Gate Charge (Qg) (Max) @ Vgs: 6.86 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 308 pF @ 10 V
Vgs (Max): ±12V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.21.0095
Mfr: Vishay Siliconix
Base Product Number: SI1069
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
| Win Source Electronics | |
|---|---|
| Product Category | Transistors |
| Product Number | 1277497-SI1069X-T1-E3 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single |
| Polarity | P-Channel |
