Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1065X-T1-E3 SI1065X-T1-E3

Manufacturer: Vishay
Win Source Part Number: 120834-SI1065X-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 236mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-89-6
Dimension: SOT-563, SOT-666
Drain-Source Breakdown Voltage: 12V
Gate-Source Threshold Voltage: 950mV @ 250μA
Max Gate Charge: 10.8nC @ 5V
Max Input Capacitance: 480pF @ 6V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 156 mOhm @ 1.18A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Balance

P-CH MOSFET 12V 1.18A 130mR SC SM Product overview: SI1065X-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V, 1.18A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, 1.18A, MOSFET Transistor, RF FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 285-SI1065X-T1-E3 can be used for catalog matching and distributor lookup.