N-Channel JFET, 20V, 530mA, 420mR, SC-89, SMT Product overview: SI1062X-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20V, 530mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 530mA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1062X-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 115042-SI1062X-T1-GE
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 220mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-89-3
Dimension: SC-89, SOT-490
Drain-Source Breakdown Voltage: 20V
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 2.7nC @ 8V
Max Input Capacitance: 43pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 420 mOhm @ 500mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance
N-Channel 20V 530mA (Ta) 220mW (Ta) Surface Mount SC-89-3
N-Channel 20V 530mA (Ta) 220mW (Ta) Surface Mount SC-89-3
N-Channel 20V 530mA (Ta) 220mW (Ta) Surface Mount SC-89-3
MOSFET N-CH 20V SC89-3
MOSFET, N-CH, 20V, 0.53A, SC-89; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:530mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1V; MSL:- RoHS Compliant: Yes
MOSFET, N-CH, 20V, 0.53A, SC-89; Transistor Polarity:N Channel; Continuous Drain Current Id:530mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.35ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power RoHS Compliant: Yes
MOSFET N-CH 20V SC89-3
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | ODG (Origin Data Global) | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI1062X-T1-GE3 | 115042-SI1062X-T1-GE3 | SI1062X-T1-GE3CT-ND | SI1062X-T1-GE3 | 70AC6486 | 05AC9477 | SI1062X-T1-GE3 |
| Product Name | N-Channel 20V 530mA MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1062X-T1-GE3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, N-Ch, 20V, 0.53A, Sc-89; Channel Type Vishay | Mosfet, N-Ch, 20V, 0.53A, Sc-89; Transistor Polarity Vishay | Single FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| PD | 220 milliwatts | 220 milliwatts | 220 milliwatts | ||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| V(BR)DSS | 20 volts | 20 volts | |||||
| Package Type | SOT3; SC-89-3 | SC-89, SOT-490 | SC-89, SOT-490 | TO-3 | TO-3 | SC-89, SOT-490 |
