Vishay Intertechnology, Inc. Single FETs, MOSFETs SI1056X-T1-E3

Description
N-Channel 20V 1.32A (Ta) 236mW (Ta) Surface Mount SC-89 (SOT-563F)
Request a Quote Datasheet
Description
N-Channel 20V 1.32A (Ta) 236mW (Ta) Surface Mount SC-89 (SOT-563F)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI1056X-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI1056X-T1-E3TR-ND
Single FETs, MOSFETs SI1056X-T1-E3TR-ND
N-Channel 20V 1.32A (Ta) 236mW (Ta) Surface Mount SC-89 (SOT-563F)

N-Channel 20V 1.32A (Ta) 236mW (Ta) Surface Mount SC-89 (SOT-563F)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1056X-T1-E3 - 028337-SI1056X-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1056X-T1-E3
028337-SI1056X-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1056X-T1-E3 028337-SI1056X-T1-E3
Manufacturer: Vishay Win Source Part Number: 028337-SI1056X-T1-E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 236mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-89-6 Dimension: SOT-563, SOT-666 Drain-Source Breakdown Voltage: 20V Gate-Source Threshold Voltage: 950mV @ 250μA Max Gate Charge: 8.7nC @ 5V Max Input Capacitance: 400pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 89 mOhm @ 1.32A, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 028337-SI1056X-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 236mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-89-6
Dimension: SOT-563, SOT-666
Drain-Source Breakdown Voltage: 20V
Gate-Source Threshold Voltage: 950mV @ 250μA
Max Gate Charge: 8.7nC @ 5V
Max Input Capacitance: 400pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 89 mOhm @ 1.32A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Singapore
N-Channel 1.32A 20V MOSFET Transistor
278-SI1056X-T1-E3
N-Channel 1.32A 20V MOSFET Transistor 278-SI1056X-T1-E3
Small Signal Field-Effect Transistor, 1.32A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SC-89, 6 PIN Product overview: SI1056X-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 1.32A, 20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1.32A, 20V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1056X-T1-E3 can be used for catalog matching and distributor lookup.

Small Signal Field-Effect Transistor, 1.32A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SC-89, 6 PIN Product overview: SI1056X-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 1.32A, 20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1.32A, 20V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1056X-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI1056X-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI1056X-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI1056X-T1-E3
MOSFET N-CH 20V 1.32A SC89-6

MOSFET N-CH 20V 1.32A SC89-6

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI1056X-T1-E3TR-ND 028337-SI1056X-T1-E3 278-SI1056X-T1-E3 SI1056X-T1-E3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1056X-T1-E3 N-Channel 1.32A 20V MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel
Package Type SOT-563, SOT-666 SOT3; SC-89-6 SOT-563, SOT-666
V(BR)DSS 20 volts
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