Vishay Intertechnology, Inc. N-Channel 1.32A 20V MOSFET Transistor SI1056X-T1-E3

Small Signal Field-Effect Transistor, 1.32A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SC-89, 6 PIN Product overview: SI1056X-T1-E3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 1.32A, 20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1.32A, 20V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1056X-T1-E3 can be used for catalog matching and distributor lookup.

N-Channel 20V 1.32A (Ta) 236mW (Ta) Surface Mount SC-89 (SOT-563F)

Manufacturer: Vishay
Win Source Part Number: 028337-SI1056X-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 236mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-89-6
Dimension: SOT-563, SOT-666
Drain-Source Breakdown Voltage: 20V
Gate-Source Threshold Voltage: 950mV @ 250μA
Max Gate Charge: 8.7nC @ 5V
Max Input Capacitance: 400pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 89 mOhm @ 1.32A, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance