Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1051X-T1-GE3 SI1051X-T1-GE3

Manufacturer: Vishay
Win Source Part Number: 109256-SI1051X-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 236mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-89-6
Dimension: SOT-563, SOT-666
Drain-Source Breakdown Voltage: 8V
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 9.45nC @ 5V
Max Input Capacitance: 560pF @ 4V
Maximum Gate-Source Voltage: ±5V
Maximum Rds On at Id,Vgs: 122 mOhm @ 1.2A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 37 pct.
Supply and Demand Status: Balance

P-Channel 8V 1.2A (Ta) 236mW (Ta) Surface Mount SC-89 (SOT-563F)

MOSFET P-CH 8V 1.2A SC89-6 Product overview: SI1051X-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8V, 1.2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 8V, 1.2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1051X-T1-GE3 can be used for catalog matching and distributor lookup.