Manufacturer: Vishay
Win Source Part Number: 064374-SI1050X-T1-GE
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 236mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-89-6
Dimension: SOT-563, SOT-666
Drain-Source Breakdown Voltage: 8V
Continuous Drain Current at 25°C: 1.34A (Ta)
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 11.6nC @ 5V
Max Input Capacitance: 585pF @ 4V
Maximum Gate-Source Voltage: ±5V
Maximum Rds On at Id,Vgs: 86 mOhm @ 1.34A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Balance
N-CH MOSFET 8V 1.34A 86mR SC-89-6 SM Product overview: SI1050X-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 8V, 1.34A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 8V, 1.34A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1050X-T1-GE3 can be used for catalog matching and distributor lookup.
N-Channel 8V 1.34A (Ta) 236mW (Ta) Surface Mount SC-89 (SOT-563F)
N-Channel 8V 1.34A (Ta) 236mW (Ta) Surface Mount SC-89 (SOT-563F)
N CHANNEL MOSFET, 8V, 1.34A, SC-89; Transistor Polarity:N Channel; Drain Source Voltage Vds:8V; Continuous Drain Current Id:1.34A; On Resistance Rds(on):0.12ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:1.5V RoHS Compliant: Yes
MOSFET, N-CH, 8V, 1.34A, SC-89 ROHS COMPLIANT: YES
MOSFET N-CH 8V 1.34A SC89-6
MOSFET N-CH 8V 1.34A SC89-6
| Win Source Electronics | ERSAELECTRONICS PTE. LTD. | DigiKey | Newark, An Avnet Company | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 064374-SI1050X-T1-GE3 | 278-SI1050X-T1-GE3 | SI1050X-T1-GE3TR-ND | 16P3688 | 57AJ0421 | SI1050X-T1-GE3 | SI1050X-T1-GE3 | SI1050X-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1050X-T1-GE3 | 8V 1.34A MOSFET Transistor | Single FETs, MOSFETs | N Channel Mosfet, 8V, 1.34A, Sc-89; Transistor Polarity Vishay | Mosfet, N-Ch, 8V, 1.34A, Sc-89 Rohs Compliant Vishay | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | |||
| V(BR)DSS | 8 volts | 8 volts | ||||||
| PD | 236 milliwatts | 236 milliwatts | 236 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3; SC-89-6 | SOT-563, SOT-666 | TO-3 | TO-3 | SOT-563, SOT-666 | Surface Mount |
