Vishay Intertechnology, Inc. Single FETs, MOSFETs SI1050X-T1-E3

Description
N-Channel 8V 1.34A (Ta) 236mW (Ta) Surface Mount SC-89 (SOT-563F)
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Description
N-Channel 8V 1.34A (Ta) 236mW (Ta) Surface Mount SC-89 (SOT-563F)
Request a Quote Datasheet

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Single FETs, MOSFETs - SI1050X-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI1050X-T1-E3TR-ND
Single FETs, MOSFETs SI1050X-T1-E3TR-ND
N-Channel 8V 1.34A (Ta) 236mW (Ta) Surface Mount SC-89 (SOT-563F)

N-Channel 8V 1.34A (Ta) 236mW (Ta) Surface Mount SC-89 (SOT-563F)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1050X-T1-E3 - 109829-SI1050X-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1050X-T1-E3
109829-SI1050X-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1050X-T1-E3 109829-SI1050X-T1-E3
Manufacturer: Vishay Win Source Part Number: 109829-SI1050X-T1-E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 236mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-89-6 Dimension: SOT-563, SOT-666 Drain-Source Breakdown Voltage: 8V Continuous Drain Current at 25°C: 1.34A (Ta) Gate-Source Threshold Voltage: 900mV @ 250μA Max Gate Charge: 11.6nC @ 5V Max Input Capacitance: 585pF @ 4V Maximum Gate-Source Voltage: ±5V Maximum Rds On at Id,Vgs: 86 mOhm @ 1.34A, 4.5V Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 109829-SI1050X-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 236mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-89-6
Dimension: SOT-563, SOT-666
Drain-Source Breakdown Voltage: 8V
Continuous Drain Current at 25°C: 1.34A (Ta)
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 11.6nC @ 5V
Max Input Capacitance: 585pF @ 4V
Maximum Gate-Source Voltage: ±5V
Maximum Rds On at Id,Vgs: 86 mOhm @ 1.34A, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI1050X-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI1050X-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI1050X-T1-E3
MOSFET N-CH 8V 1.34A SC89-6

MOSFET N-CH 8V 1.34A SC89-6

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI1050X-T1-E3TR-ND 109829-SI1050X-T1-E3 SI1050X-T1-E3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1050X-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type SOT-563, SOT-666 SOT3; SC-89-6 SOT-563, SOT-666
V(BR)DSS 8 volts
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