Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1046R-T1-GE3 SI1046R-T1-GE3

Description
Manufacturer: Vishay Win Source Part Number: 1095669-SI1046R-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 250mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-75A Dimension: SC-75A Drain-Source Breakdown Voltage: 20V Gate-Source Threshold Voltage: 950mV @ 250μA Max Gate Charge: 1.49nC @ 5V Max Input Capacitance: 66pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 420 mOhm @ 606mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 1095669-SI1046R-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 250mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-75A Dimension: SC-75A Drain-Source Breakdown Voltage: 20V Gate-Source Threshold Voltage: 950mV @ 250μA Max Gate Charge: 1.49nC @ 5V Max Input Capacitance: 66pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 420 mOhm @ 606mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1046R-T1-GE3 - 1095669-SI1046R-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1046R-T1-GE3
1095669-SI1046R-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1046R-T1-GE3 1095669-SI1046R-T1-GE3
Manufacturer: Vishay Win Source Part Number: 1095669-SI1046R-T1-G E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 250mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-75A Dimension: SC-75A Drain-Source Breakdown Voltage: 20V Gate-Source Threshold Voltage: 950mV @ 250μA Max Gate Charge: 1.49nC @ 5V Max Input Capacitance: 66pF @ 10V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 420 mOhm @ 606mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 1095669-SI1046R-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 250mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-75A
Dimension: SC-75A
Drain-Source Breakdown Voltage: 20V
Gate-Source Threshold Voltage: 950mV @ 250μA
Max Gate Charge: 1.49nC @ 5V
Max Input Capacitance: 66pF @ 10V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 420 mOhm @ 606mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
20V MOSFET Transistor 278-SI1046R-T1-GE3
MOSFET N-CH 20V SC75A Product overview: SI1046R-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1046R-T1-GE3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 20V SC75A Product overview: SI1046R-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1046R-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site
Single FETs, MOSFETs - SI1046R-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI1046R-T1-GE3
Single FETs, MOSFETs SI1046R-T1-GE3
MOSFET N-CH 20V SC75A

MOSFET N-CH 20V SC75A

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI1046R-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI1046R-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI1046R-T1-GE3
MOSFET N-CH 20V SC75A

MOSFET N-CH 20V SC75A

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1095669-SI1046R-T1-GE3 278-SI1046R-T1-GE3 SI1046R-T1-GE3 SI1046R-T1-GE3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1046R-T1-GE3 20V MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel
V(BR)DSS 20 volts 20 volts
PD 250 milliwatts 250 milliwatts 250 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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