Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1037X-T1-E3 SI1037X-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 1095667-SI1037X-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 170mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-89 (SOT-563F) Dimension: SOT-563, SOT-666 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 770mA (Ta) Gate-Source Threshold Voltage: 450mV @ 250μA (Min) Max Gate Charge: 5.5nC @ 4.5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 195 mOhm @ 770mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Vishay Win Source Part Number: 1095667-SI1037X-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 170mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-89 (SOT-563F) Dimension: SOT-563, SOT-666 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 770mA (Ta) Gate-Source Threshold Voltage: 450mV @ 250μA (Min) Max Gate Charge: 5.5nC @ 4.5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 195 mOhm @ 770mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1037X-T1-E3 - 1095667-SI1037X-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1037X-T1-E3
1095667-SI1037X-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1037X-T1-E3 1095667-SI1037X-T1-E3
Manufacturer: Vishay Win Source Part Number: 1095667-SI1037X-T1-E 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: P-Channel Power Dissipation (Max): 170mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-89 (SOT-563F) Dimension: SOT-563, SOT-666 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 770mA (Ta) Gate-Source Threshold Voltage: 450mV @ 250μA (Min) Max Gate Charge: 5.5nC @ 4.5V Maximum Gate-Source Voltage: ±8V Maximum Rds On at Id,Vgs: 195 mOhm @ 770mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 1095667-SI1037X-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 170mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-89 (SOT-563F)
Dimension: SOT-563, SOT-666
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 770mA (Ta)
Gate-Source Threshold Voltage: 450mV @ 250μA (Min)
Max Gate Charge: 5.5nC @ 4.5V
Maximum Gate-Source Voltage: ±8V
Maximum Rds On at Id,Vgs: 195 mOhm @ 770mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Sufficient

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Technical Specifications

  Win Source Electronics
Product Category Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1095667-SI1037X-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1037X-T1-E3
Polarity P-Channel; P-Channel
V(BR)DSS 20 volts
PD 170 milliwatts
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