Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1035X-T1-E3 SI1035X-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 097089-SI1035X-T1-E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-89-6 Maximum Power Dissipation: 250mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 180mA, 145mA Gate-Source Threshold Voltage: 400mV @ 250μA (Min) Max Gate Charge: 0.75nC @ 4.5V Maximum Rds On at Id,Vgs: 5 Ohm @ 200mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Vishay Win Source Part Number: 097089-SI1035X-T1-E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-89-6 Maximum Power Dissipation: 250mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 180mA, 145mA Gate-Source Threshold Voltage: 400mV @ 250μA (Min) Max Gate Charge: 0.75nC @ 4.5V Maximum Rds On at Id,Vgs: 5 Ohm @ 200mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Sufficient
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1035X-T1-E3 - 097089-SI1035X-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1035X-T1-E3
097089-SI1035X-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1035X-T1-E3 097089-SI1035X-T1-E3
Manufacturer: Vishay Win Source Part Number: 097089-SI1035X-T1-E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-89-6 Maximum Power Dissipation: 250mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 180mA, 145mA Gate-Source Threshold Voltage: 400mV @ 250μA (Min) Max Gate Charge: 0.75nC @ 4.5V Maximum Rds On at Id,Vgs: 5 Ohm @ 200mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 29 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 097089-SI1035X-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-89-6
Maximum Power Dissipation: 250mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 180mA, 145mA
Gate-Source Threshold Voltage: 400mV @ 250μA (Min)
Max Gate Charge: 0.75nC @ 4.5V
Maximum Rds On at Id,Vgs: 5 Ohm @ 200mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 29 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
FET, MOSFET Arrays - SI1035X-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI1035X-T1-E3TR-ND
FET, MOSFET Arrays SI1035X-T1-E3TR-ND
Mosfet Array N and P-Channel 20V 180mA, 145mA 250mW Surface Mount SC-89 (SOT-563F)

Mosfet Array N and P-Channel 20V 180mA, 145mA 250mW Surface Mount SC-89 (SOT-563F)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI1035X-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI1035X-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI1035X-T1-E3
MOSFET N/P-CH 20V SC89

MOSFET N/P-CH 20V SC89

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 097089-SI1035X-T1-E3 SI1035X-T1-E3TR-ND SI1035X-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1035X-T1-E3 FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity P-Channel
V(BR)DSS 20 volts
PD 250 milliwatts
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