2-Ch N-Ch JFET, 20V, 180mA, 5R, SC, SMT Product overview: SI1034X-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 180mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 180mA, MOSFET Transistor, FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 2088-SI1034X-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET 2N-CH 20V 0.18A SC89-6
Mosfet Array 2 N-Channel (Dual) 20V 180mA 250mW Surface Mount SC-89 (SOT-563F)
Mosfet Array 2 N-Channel (Dual) 20V 180mA 250mW Surface Mount SC-89 (SOT-563F)
Mosfet Array 2 N-Channel (Dual) 20V 180mA 250mW Surface Mount SC-89 (SOT-563F)
Manufacturer: Vishay
Win Source Part Number: 028335-SI1034X-T1-GE
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-89-6
Maximum Power Dissipation: 250mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 180mA
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Gate Charge: 0.75nC @ 4.5V
Maximum Rds On at Id,Vgs: 5 Ohm @ 200mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Sufficient
MOSFET 2N-CH 20V 0.18A SC89
N CHANNEL, MOSFET, 20V, 200mA, SC-89; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:200mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:5V; Gate Source Threshold Voltage Max:1.2V RoHS Compliant: Yes
MOSFET Dual N-Ch MOSFET 20V 5.0 ohms @ 4.5V
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 2088-SI1034X-T1-GE3 | SI1034X-T1-GE3 | SI1034X-T1-GE3DKR-ND | 028335-SI1034X-T1-GE3 | SI1034X-T1-GE3 | 16P3683 | SI1034X-T1-GE3 |
| Product Name | 20V 180mA MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1034X-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel, Mosfet, 20V, 200Ma, Sc-89; Channel Type Vishay | MOSFET |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | |||
| PD | 250 milliwatts | 250 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) |
