MOSFET 2N-CH 20V SC89-6 Product overview: SI1034CX-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1034CX-T1-GE3 can be used for catalog matching and distributor lookup.
Mosfet Array 2 N-Channel (Dual) 20V 610mA (Ta) 220mW Surface Mount SC-89 (SOT-563F)
Mosfet Array 2 N-Channel (Dual) 20V 610mA (Ta) 220mW Surface Mount SC-89 (SOT-563F)
Mosfet Array 2 N-Channel (Dual) 20V 610mA (Ta) 220mW Surface Mount SC-89 (SOT-563F)
MOSFET 2N-CH 20V SC89-6
Dual N-Ch MOSFET SC-89-6 20V 396 mohms @
Dual N-Ch MOSFET SC-89-6 20V 396 mohms @
Dual N-Ch MOSFET SC-89-6 20V 396 mohms @
Manufacturer: Vishay
Win Source Part Number: 064373-SI1034CX-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: Si1034CX
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-89-6
Maximum Power Dissipation: 220mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 610mA (Ta)
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 2nC @ 8V
Max Input Capacitance: 43pF @ 10V
Maximum Rds On at Id,Vgs: 396 mOhm @ 500mA, 4.5V
Alternative Parts (Cross-Reference): AO5804E; PMDT290UNE; PMDT290UNE,115; DMG1024UV;
Introduction Date: February 14, 2011
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Limited
Trans MOSFET N-CH 20V 0.61A 6-Pin SC-89 T/R
MOSFET 2N-CH 20V 0.61A SC89
MOSFET, DUAL N-CH, 20V, 0.16A, SC-89; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:610mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.33ohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:1V; Power RoHS Compliant: Yes
DUAL N-CHANNEL 20-V (D-S) MOSFET
| ERSAELECTRONICS PTE. LTD. | DigiKey | ODG (Origin Data Global) | RS Components, Ltd. | Win Source Electronics | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 278-SI1034CX-T1-GE3 | SI1034CX-T1-GE3TR-ND | SI1034CX-T1-GE3 | 1807262 | 064373-SI1034CX-T1-GE3 | 880-SI1034CX-T1-GE3 | SI1034CX-T1-GE3 | 61AC1929 | 26AK9914 | SI1034CX-T1-GE3 |
| Product Name | 20V MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1034CX-T1-GE3 | Trans MOSFET N-CH 20V 0.61A 6-Pin SC-89 T/R | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, Dual N-Ch, 20V, 0.16A, Sc-89; Transistor Polarity Vishay | Dual N-Channel 20-V (D-S) Mosfet Vishay | MOSFET |
| PD | 220 milliwatts | 220 milliwatts | 220 milliwatts | |||||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||||||
| Package Type | SOT-563, SOT-666 | SOT-563, SOT-666 | SC-89 | SOT3; SC-89-6 | TO-3 | TO-3 | ||||
| Polarity | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | |||||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON |
