MOSFET N-CH 20V 200MA SC89-3
Manufacturer: Vishay
Win Source Part Number: 098238-SI1032X-T1-GE
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-89-3
Dimension: SC-89, SOT-490
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 200mA (Ta)
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Gate Charge: 0.75nC @ 4.5V
Maximum Gate-Source Voltage: ±6V
Maximum Rds On at Id,Vgs: 5 Ohm @ 200mA, 4.5V
Alternative Parts (Cross-Reference): FDY301NZ; Si1032X-T1; Si1032X;
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Sufficient
N-Channel 20V 200mA (Ta) 300mW (Ta) Surface Mount SC-89-3
N-Channel 20V 200mA (Ta) 300mW (Ta) Surface Mount SC-89-3
N-Channel 20V 200mA (Ta) 300mW (Ta) Surface Mount SC-89-3
MOSFET N-CH 20V 200MA SC89-3
N CHANNEL MOSFET, 20V, 200mA, SC-89, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:200mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:6V; Power Dissipation:300mW RoHS Compliant: Yes
N CHANNEL MOSFET, 20V, 200mA, SC-89; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:200mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:6V; Gate Source Threshold Voltage Max:700mV RoHS Compliant: Yes
MOSFET 20V 200mA 340mW 5.0ohm @ 4.5V
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI1032X-T1-GE3 | 098238-SI1032X-T1-GE3 | SI1032X-T1-GE3TR-ND | SI1032X-T1-GE3 | 16P3682 | 85W3201 | SI1032X-T1-GE3 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1032X-T1-GE3 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 20V, 200Ma, Sc-89, Full Reel; Channel Type Vishay | N Channel Mosfet, 20V, 200Ma, Sc-89; Channel Type Vishay | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 20 volts | 20 volts | |||||
| IDSS | 200 milliamps | 200 milliamps | 200 milliamps |
