Vishay Precision Group Single FETs, MOSFETs SI1032X-T1-GE3

N-Channel 20V 200mA (Ta) 300mW (Ta) Surface Mount SC-89-3

N-Channel 20V 200mA (Ta) 300mW (Ta) Surface Mount SC-89-3

N-Channel 20V 200mA (Ta) 300mW (Ta) Surface Mount SC-89-3

MOSFET N-CH 20V 200MA SC89-3

N-CH JFET 20V 200mA 5R SC-89 Surface Mount Product overview: SI1032X-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, 20V, 200mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, 20V, 200mA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1032X-T1-GE3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay
Win Source Part Number: 098238-SI1032X-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-89-3
Dimension: SC-89, SOT-490
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 200mA (Ta)
Gate-Source Threshold Voltage: 1.2V @ 250μA
Max Gate Charge: 0.75nC @ 4.5V
Maximum Gate-Source Voltage: ±6V
Maximum Rds On at Id,Vgs: 5 Ohm @ 200mA, 4.5V
Alternative Parts (Cross-Reference): FDY301NZ; Si1032X-T1; Si1032X;
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Sufficient