MOSFET Dual N/P-Ch 60V 0.3/0.19A SOT563F
MOSFET Dual N/P-Ch 60V 0.3/0.19A SOT563F
Mosfet Array N and P-Channel 60V 305mA, 190mA 250mW Surface Mount SC-89 (SOT-563F)
Mosfet Array N and P-Channel 60V 305mA, 190mA 250mW Surface Mount SC-89 (SOT-563F)
Mosfet Array N and P-Channel 60V 305mA, 190mA 250mW Surface Mount SC-89 (SOT-563F)
Manufacturer: Vishay
Win Source Part Number: 103361-SI1029X-T1-GE
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: Si1029X
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-89-6
Maximum Power Dissipation: 250mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 305mA, 190mA
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 0.75nC @ 4.5V
Max Input Capacitance: 30pF @ 25V
Maximum Rds On at Id,Vgs: 1.4 Ohm @ 500mA, 10V
Alternative Parts (Cross-Reference): DMG1029SV-7; CMLM0708A; CMLM0708A TR;
Introduction Date: April 18, 2001
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
Application Field: Used in Industrial, Power Management
MOSFET N/P-CH 60V SC89-6
MOSFET, N AND P CHANNEL, 60V, 1.4OHM, 305mA, SOT-563, FULL REEL; Transistor Polarity:Complementa
MOSFET, NP CH, 60V, SC-89; Transistor Polarity:N and P Channel; Continuous Drain Current Id:305mA; Drain Source Voltage Vds:60V; On Resistance Rds(on):1.4ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.5V; Power RoHS Compliant: Yes
MOSFET N/P-CH 60V SC89-6
MOSFET N/P-CH 60V 0.305A SC89
MOSFET 60V Vds 20V Vgs SC89-6 N&P PAIR
| RS Components, Ltd. | RS Components, Ltd. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Newark, An Avnet Company | Newark, An Avnet Company | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 7879055P | 7879055 | SI1029X-T1-GE3CT-ND | 103361-SI1029X-T1-GE3 | SI1029X-T1-GE3 | 84W7285 | 60AC3815 | 880-SI1029X-T1-GE3 | SI1029X-T1-GE3 | SI1029X-T1-GE3 |
| Product Name | MOSFETs | MOSFETs | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1029X-T1-GE3 | FET, MOSFET Arrays | Mosfet, N And P Channel, 60V, 1.4Ohm, 305Ma, Sot-563, Full Reel; Transistor Polarity Vishay | Mosfet, Np Ch, 60V, Sc-89; Transistor Polarity Vishay | MOSFET N/P-CH 60V SC89-6 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Package Type | SC-89-6 | Sot-523 (sc-89) | SOT-563, SOT-666 | SOT3; SC-89-6 | SOT-563, SOT-666 | TO-3 | TO-3 | |||
| MOSFET Operating Mode | Enhancement | Enhancement; ENHANCEMENT MODE | ||||||||
| Number of units in IC | 2 | 2 | ||||||||
| Polarity | P-Channel | P-Channel; N and P-Channel | P-Channel | N-Channel; P-Channel; N-CHANNEL AND P-CHANNEL | ||||||
| V(BR)DSS | 60 volts | 60 volts | 60 volts |
