Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1026X-T1-E3 SI1026X-T1-E3

Manufacturer: Vishay
Win Source Part Number: 100891-SI1026X-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-89-6
Maximum Power Dissipation: 250mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 305mA
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 0.6nC @ 4.5V
Max Input Capacitance: 30pF @ 25V
Maximum Rds On at Id,Vgs: 1.4 Ohm @ 500mA, 10V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Sufficient

Mosfet Array 2 N-Channel (Dual) 60V 305mA 250mW Surface Mount SC-89 (SOT-563F)

MOSFET 2N-CH 60V 0.305A SC89 Product overview: SI1026X-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 0.305A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 0.305A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI1026X-T1-E3 can be used for catalog matching and distributor lookup.