MOSFET 2P-CH 60V 0.19A SC-89
Mosfet Array 2 P-Channel (Dual) 60V 190mA 250mW Surface Mount SC-89 (SOT-563F)
Mosfet Array 2 P-Channel (Dual) 60V 190mA 250mW Surface Mount SC-89 (SOT-563F)
Mosfet Array 2 P-Channel (Dual) 60V 190mA 250mW Surface Mount SC-89 (SOT-563F)
Manufacturer: Vishay
Win Source Part Number: 106656-SI1025X-T1-GE
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-89-6
Maximum Power Dissipation: 250mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 190mA
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 1.7nC @ 15V
Max Input Capacitance: 23pF @ 25V
Maximum Rds On at Id,Vgs: 4 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Balance
MOSFET 2P-CH 60V 0.19A SC89
MOSFET, P CHANNEL, -60V, -190mA, SC-89-6; Transistor Polarity:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:190mA; On Resistance Rds(on):8ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:4.5V RoHS Compliant: Yes
Dual MOSFET, Dual P Channel, -190 mA, -60 V, 4 ohm, -4.5 V, -3 V RoHS Compliant: Yes
P CHANNEL, MOSFET, -60V, -500mA, SC-89, FULL REEL; Transistor Polarity:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:500mA; On Resistance Rds(on):4ohm; Transistor Mounting:Surface Mount; No. of Pins:6Pins RoHS Compliant: Yes
MOSFET -60V Vds 20V Vgs SC89-6
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI1025X-T1-GE3 | SI1025X-T1-GE3DKR-ND | 106656-SI1025X-T1-GE3 | SI1025X-T1-GE3 | 69W7171 | 97W2617 | 16P3677 | SI1025X-T1-GE3 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1025X-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Mosfet, P Channel, -60V, -190Ma, Sc-89-6; Transistor Polarity Vishay | Dual Mosfet, Dual P Channel, -190 Ma, -60 V, 4 Ohm, -4.5 V, -3 V Rohs Compliant Vishay | P Channel, Mosfet, -60V, -500Ma, Sc-89, Full Reel; Transistor Polarity Vishay | MOSFET |
| Polarity | P-Channel; 2 P-Channel (Dual) | P-Channel | P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| IDSS | 190 milliamps | 190 milliamps | 500 milliamps | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
