Vishay Intertechnology, Inc. FET, MOSFET Arrays SI1025X-T1-E3

Mosfet Array 2 P-Channel (Dual) 60V 190mA 250mW Surface Mount SC-89 (SOT-563F)

Manufacturer: Vishay
Win Source Part Number: 096733-SI1025X-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-89-6
Maximum Power Dissipation: 250mW
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 190mA
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 1.7nC @ 15V
Max Input Capacitance: 23pF @ 25V
Maximum Rds On at Id,Vgs: 4 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Sufficient

MOSFET 2P-CH 60V 0.19A SC89 Product overview: SI1025X-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 60V, 0.19A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 60V, 0.19A, MOSFET Transistor, FET, MOSFET Arrays. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 289-SI1025X-T1-E3 can be used for catalog matching and distributor lookup.