Vishay Precision Group FET, MOSFET Arrays SI1024X-T1-GE3

Description
MOSFET 2N-CH 20V 0.485A SC89-6
Request a Quote Datasheet
Description
MOSFET 2N-CH 20V 0.485A SC89-6
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - SI1024X-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI1024X-T1-GE3
FET, MOSFET Arrays SI1024X-T1-GE3
MOSFET 2N-CH 20V 0.485A SC89-6

MOSFET 2N-CH 20V 0.485A SC89-6

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1024X-T1-GE3 - 028331-SI1024X-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1024X-T1-GE3
028331-SI1024X-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1024X-T1-GE3 028331-SI1024X-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028331-SI1024X-T1-GE 3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Family Name: Si1024X Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-89-6 Maximum Power Dissipation: 250mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 485mA Gate-Source Threshold Voltage: 900mV @ 250μA Max Gate Charge: 0.75nC @ 4.5V Maximum Rds On at Id,Vgs: 700 mOhm @ 600mA, 4.5V Alternative Parts (Cross-Reference): EM6K7T2R; EM6K7; EM6K7T2CR; FDY3000NZ; Introduction Date: February 08, 2001 ECCN: EAR99 Estimated EOL Date: 2022 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 028331-SI1024X-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: Si1024X
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-89-6
Maximum Power Dissipation: 250mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 485mA
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 0.75nC @ 4.5V
Maximum Rds On at Id,Vgs: 700 mOhm @ 600mA, 4.5V
Alternative Parts (Cross-Reference): EM6K7T2R; EM6K7; EM6K7T2CR; FDY3000NZ;
Introduction Date: February 08, 2001
ECCN: EAR99
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
FET, MOSFET Arrays - SI1024X-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI1024X-T1-GE3TR-ND
FET, MOSFET Arrays SI1024X-T1-GE3TR-ND
Mosfet Array 2 N-Channel (Dual) 20V 485mA 250mW Surface Mount SC-89 (SOT-563F)

Mosfet Array 2 N-Channel (Dual) 20V 485mA 250mW Surface Mount SC-89 (SOT-563F)

Buy Now Datasheet
FET, MOSFET Arrays - SI1024X-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI1024X-T1-GE3DKR-ND
FET, MOSFET Arrays SI1024X-T1-GE3DKR-ND
Mosfet Array 2 N-Channel (Dual) 20V 485mA 250mW Surface Mount SC-89 (SOT-563F)

Mosfet Array 2 N-Channel (Dual) 20V 485mA 250mW Surface Mount SC-89 (SOT-563F)

Buy Now Datasheet
FET, MOSFET Arrays - SI1024X-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI1024X-T1-GE3CT-ND
FET, MOSFET Arrays SI1024X-T1-GE3CT-ND
Mosfet Array 2 N-Channel (Dual) 20V 485mA 250mW Surface Mount SC-89 (SOT-563F)

Mosfet Array 2 N-Channel (Dual) 20V 485mA 250mW Surface Mount SC-89 (SOT-563F)

Buy Now Datasheet
Singapore
20V 485mA MOSFET Transistor
278-SI1024X-T1-GE3
20V 485mA MOSFET Transistor 278-SI1024X-T1-GE3
N-CH JFET 20V 485mA 700mR SOT-563 Product overview: SI1024X-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 485mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 485mA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1024X-T1-GE3 can be used for catalog matching and distributor lookup.

N-CH JFET 20V 485mA 700mR SOT-563 Product overview: SI1024X-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 485mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 485mA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1024X-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Mosfet, Dual N Channel, 20V, 0.485A, Sc-89-6; Transistor Polarity Vishay - 16P3676 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual N Channel, 20V, 0.485A, Sc-89-6; Transistor Polarity Vishay
16P3676
Mosfet, Dual N Channel, 20V, 0.485A, Sc-89-6; Transistor Polarity Vishay 16P3676
MOSFET, DUAL N CHANNEL, 20V, 0.485A, SC-89-6; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:485mA; On Resistance Rds(on):0.41ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5VRoHS Compliant: Yes

MOSFET, DUAL N CHANNEL, 20V, 0.485A, SC-89-6; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:485mA; On Resistance Rds(on):0.41ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5VRoHS Compliant: Yes

Supplier's Site
Mosfet, Dual N Channel, 20V, 0.485A, Sc-89-6, Full Reel; Transistor Polarity Vishay - 29X0509 - Newark, An Avnet Company
Chicago, IL, United States
Mosfet, Dual N Channel, 20V, 0.485A, Sc-89-6, Full Reel; Transistor Polarity Vishay
29X0509
Mosfet, Dual N Channel, 20V, 0.485A, Sc-89-6, Full Reel; Transistor Polarity Vishay 29X0509
MOSFET, DUAL N CHANNEL, 20V, 0.485A, SC-89-6, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:485mA; On Resistance Rds(on):0.41ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

MOSFET, DUAL N CHANNEL, 20V, 0.485A, SC-89-6, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:485mA; On Resistance Rds(on):0.41ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes

Supplier's Site Datasheet
20V 485mA 250mW 700mΩ@4.5V,600mA 900mV@250uA 2 N-Channel SOT-563 MOSFETs ROHS - 17930-SI1024X-T1-GE3 - Utmel Electronic Limited
Hong Kong, China
20V 485mA 250mW 700mΩ@4.5V,600mA 900mV@250uA 2 N-Channel SOT-563 MOSFETs ROHS
17930-SI1024X-T1-GE3
20V 485mA 250mW 700mΩ@4.5V,600mA 900mV@250uA 2 N-Channel SOT-563 MOSFETs ROHS 17930-SI1024X-T1-GE3
20V 485mA 250mW 700mΩ@4.5V,600mA 900mV@250uA 2 N-Channel SOT-563 MOSFETs ROHS

20V 485mA 250mW 700mΩ@4.5V,600mA 900mV@250uA 2 N-Channel SOT-563 MOSFETs ROHS

Supplier's Site
Sheung Wan, Hong Kong
MOSFET Dual N-Ch MOSFET 20V 700 mohms @ 4.5V

MOSFET Dual N-Ch MOSFET 20V 700 mohms @ 4.5V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI1024X-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI1024X-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI1024X-T1-GE3
MOSFET 2N-CH 20V 485MA SC89

MOSFET 2N-CH 20V 485MA SC89

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Utmel Electronic Limited VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI1024X-T1-GE3 028331-SI1024X-T1-GE3 SI1024X-T1-GE3TR-ND 278-SI1024X-T1-GE3 16P3676 17930-SI1024X-T1-GE3 SI1024X-T1-GE3 SI1024X-T1-GE3
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1024X-T1-GE3 FET, MOSFET Arrays 20V 485mA MOSFET Transistor Mosfet, Dual N Channel, 20V, 0.485A, Sc-89-6; Transistor Polarity Vishay 20V 485mA 250mW 700mΩ@4.5V,600mA 900mV@250uA 2 N-Channel SOT-563 MOSFETs ROHS MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; 2 N-Channel (Dual) N-Channel N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 20 volts 20 volts
IDSS 485 milliamps 485 milliamps
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 C (-67 F)
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