Manufacturer: Vishay
Win Source Part Number: 028331-SI1024X-T1-GE
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Family Name: Si1024X
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-89-6
Maximum Power Dissipation: 250mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 485mA
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 0.75nC @ 4.5V
Maximum Rds On at Id,Vgs: 700 mOhm @ 600mA, 4.5V
Alternative Parts (Cross-Reference): EM6K7T2R; EM6K7; EM6K7T2CR; FDY3000NZ;
Introduction Date: February 08, 2001
ECCN: EAR99
Estimated EOL Date: 2022
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Balance
MOSFET 2N-CH 20V 0.485A SC89-6
Mosfet Array 2 N-Channel (Dual) 20V 485mA 250mW Surface Mount SC-89 (SOT-563F)
Mosfet Array 2 N-Channel (Dual) 20V 485mA 250mW Surface Mount SC-89 (SOT-563F)
Mosfet Array 2 N-Channel (Dual) 20V 485mA 250mW Surface Mount SC-89 (SOT-563F)
MOSFET 2N-CH 20V 485MA SC89
20V 485mA 250mW 700mΩ@4.5V,600mA 900mV@250uA 2 N-Channel SOT-563 MOSFETs ROHS
MOSFET Dual N-Ch MOSFET 20V 700 mohms @ 4.5V
MOSFET, DUAL N CHANNEL, 20V, 0.485A, SC-89-6; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:485mA; On Resistance Rds(on):0.41ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5VRoHS Compliant: Yes
MOSFET, DUAL N CHANNEL, 20V, 0.485A, SC-89-6, FULL REEL; Transistor Polarity:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:485mA; On Resistance Rds(on):0.41ohm; Transistor Mounting:Surface Mount RoHS Compliant: Yes
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 028331-SI1024X-T1-GE3 | SI1024X-T1-GE3 | SI1024X-T1-GE3TR-ND | SI1024X-T1-GE3 | 17930-SI1024X-T1-GE3 | SI1024X-T1-GE3 | 16P3676 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1024X-T1-GE3 | FET, MOSFET Arrays | FET, MOSFET Arrays | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | 20V 485mA 250mW 700mΩ@4.5V,600mA 900mV@250uA 2 N-Channel SOT-563 MOSFETs ROHS | MOSFET | Mosfet, Dual N Channel, 20V, 0.485A, Sc-89-6; Transistor Polarity Vishay |
| Polarity | N-Channel | N-Channel; 2 N-Channel (Dual) | N-Channel | N-Channel | |||
| V(BR)DSS | 20 volts | 20 volts | |||||
| PD | 250 milliwatts | ||||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||||
| Package Type | SOT3; SC-89-6 | SOT-563, SOT-666 | SOT-563, SOT-666 | TO-3 |
