Vishay Intertechnology, Inc. FET, MOSFET Arrays SI1024X-T1-E3

Description
MOSFET 2N-CH 20V 0.485A SOT563F
Request a Quote Datasheet
Description
MOSFET 2N-CH 20V 0.485A SOT563F
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
FET, MOSFET Arrays - SI1024X-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
FET, MOSFET Arrays
SI1024X-T1-E3
FET, MOSFET Arrays SI1024X-T1-E3
MOSFET 2N-CH 20V 0.485A SOT563F

MOSFET 2N-CH 20V 0.485A SOT563F

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1024X-T1-E3 - 105276-SI1024X-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1024X-T1-E3
105276-SI1024X-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1024X-T1-E3 105276-SI1024X-T1-E3
Manufacturer: Vishay Win Source Part Number: 105276-SI1024X-T1-E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: 2 N-Channel (Dual) FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-89-6 Maximum Power Dissipation: 250mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 485mA Gate-Source Threshold Voltage: 900mV @ 250μA Max Gate Charge: 0.75nC @ 4.5V Maximum Rds On at Id,Vgs: 700 mOhm @ 600mA, 4.5V Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 62 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 105276-SI1024X-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 N-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-89-6
Maximum Power Dissipation: 250mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 485mA
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 0.75nC @ 4.5V
Maximum Rds On at Id,Vgs: 700 mOhm @ 600mA, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
FET, MOSFET Arrays - SI1024X-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI1024X-T1-E3TR-ND
FET, MOSFET Arrays SI1024X-T1-E3TR-ND
Mosfet Array 2 N-Channel (Dual) 20V 485mA 250mW Surface Mount SC-89 (SOT-563F)

Mosfet Array 2 N-Channel (Dual) 20V 485mA 250mW Surface Mount SC-89 (SOT-563F)

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI1024X-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI1024X-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI1024X-T1-E3
MOSFET 2N-CH 20V 485MA SC89

MOSFET 2N-CH 20V 485MA SC89

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number SI1024X-T1-E3 105276-SI1024X-T1-E3 SI1024X-T1-E3TR-ND SI1024X-T1-E3
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1024X-T1-E3 FET, MOSFET Arrays Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; 2 N-Channel (Dual) N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 20 volts 20 volts
IDSS 485 milliamps
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