Manufacturer: Vishay
Win Source Part Number: 028330-SI1023X-T1-GE
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: 2 P-Channel (Dual)
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-89-6
Maximum Power Dissipation: 250mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 370mA
Gate-Source Threshold Voltage: 450mV @ 250μA (Min)
Max Gate Charge: 1.5nC @ 4.5V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 350mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
MOSFET 2P-CH 20V 0.37A SC89-6
Mosfet Array 2 P-Channel (Dual) 20V 370mA 250mW Surface Mount SC-89 (SOT-563F)
Mosfet Array 2 P-Channel (Dual) 20V 370mA 250mW Surface Mount SC-89 (SOT-563F)
Mosfet Array 2 P-Channel (Dual) 20V 370mA 250mW Surface Mount SC-89 (SOT-563F)
P-CH JFET, 20V, 370mA, 1.2R, SOT-563-6, 2 Channel Product overview: SI1023X-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Dual, 20V, 370mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, Dual, 20V, 370mA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1023X-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET Dual P-Ch MOSFET 20V 1.2 ohms @ 4.5V
P CHANNEL MOSFET, -20V, SC-89; Transistor Polarity:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:350mA; On Resistance Rds(on):2.7ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:6V; Product Range:- RoHS Compliant: Yes
MOSFET 2P-CH 20V 0.37A SC89
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 028330-SI1023X-T1-GE3 | SI1023X-T1-GE3 | SI1023X-T1-GE3DKR-ND | 278-SI1023X-T1-GE3 | SI1023X-T1-GE3 | 16P3675 | SI1023X-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1023X-T1-GE3 | FET, MOSFET Arrays | FET, MOSFET Arrays | Dual 20V 370mA MOSFET Transistor | MOSFET | P Channel Mosfet, -20V, Sc-89; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; 2 P-Channel (Dual) | P-Channel | P-Channel | |||
| V(BR)DSS | 20 volts | 20 volts | |||||
| PD | 250 milliwatts | 250 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | ||||
| Package Type | SOT3; SC-89-6 | SOT-563, SOT-666 | SOT-563, SOT-666 | TO-3 |
