Manufacturer: Vishay
Win Source Part Number: 107133-SI1022R-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 250mW (Ta)
Family Name: Si1022R
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-75A
Dimension: SC-75A
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 330mA (Ta)
Gate-Source Threshold Voltage: 2.5V @ 250μA
Max Gate Charge: 0.6nC @ 4.5V
Max Input Capacitance: 30pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.25 Ohm @ 500mA, 10V
Alternative Parts (Cross-Reference): SI1022R-T1-GE3; 2SK1061(TPE4); 2SK1061(TPE4,PP,F); 2SK1061(TPE4KEHINF;
Introduction Date: January 30, 2001
ECCN: EAR99
Country of Origin: China
Estimated EOL Date: Obsolete / End of life
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
MOSFET N-CH 60V 330MA SC75A
N-Channel 60V 330mA (Ta) 250mW (Ta) Surface Mount SC-75A
MOSFET N-CH 60V 330MA SC75A
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 107133-SI1022R-T1-E3 | SI1022R-T1-E3 | SI1022R-T1-E3TR-ND | SI1022R-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1022R-T1-E3 | Single FETs, MOSFETs | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |
| V(BR)DSS | 60 volts | 60 volts | ||
| PD | 250 milliwatts | 250 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
