The Si1021R is a P-channel MOSFET designed for high-side switching and low-voltage applications, featuring a drain-source voltage rating of -60 V and a continuous drain current of -190 mA at 25 °C. It is packaged in the miniature SC-75A (SOT-416) surface-mount case, with dimensions of 1.575 mm × 1.60 mm × 0.80 mm. The device has a typical on-resistance of 4 Ω at -10 V gate-source voltage and a gate threshold voltage range of -1 to -3.0 V. It supports a maximum junction temperature of 150 °C and has a typical switching time of 20 ns turn-on and 35 ns turn-off. The MOSFET is ESD protected to 2000 V, complies with RoHS Directive 2002/95/EC, and is halogen-free per IEC 61249-2-21.
P CH MOSFET, -60V, 190mA, SC-75A, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:190mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:20V; Gate Source Threshold Voltage Max:3V RoHS Compliant: No
| Newark, An Avnet Company | |
|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 28AC2115 |
| Product Name | P Ch Mosfet, -60V, 190Ma, Sc-75A, Full Reel; Channel Type Vishay |
| IDSS | 190 milliamps |
