Manufacturer: Vishay
Win Source Part Number: 028328-SI1021R-T1-GE
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 250mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-75A
Dimension: SC-75A
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 190mA (Ta)
Gate-Source Threshold Voltage: 3V @ 250μA
Max Gate Charge: 1.7nC @ 15V
Max Input Capacitance: 23pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Limited
MOSFET P-CH 60V 190MA SC75A
P-Channel 60V 190mA (Ta) 250mW (Ta) Surface Mount SC-75A
P-Channel 60V 190mA (Ta) 250mW (Ta) Surface Mount SC-75A
P-Channel 60V 190mA (Ta) 250mW (Ta) Surface Mount SC-75A
P-CH JFET -60V, 190mA, 4R, SOT-416, Surface Mount Product overview: SI1021R-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include SMD, -60V, 190mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, SMD, -60V, 190mA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1021R-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET, P-CH, 60V, 0.19A, 150DEG C/0.25W; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:190mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes
MOSFET, P CHANNEL, -60V, -190mA, SOT-416-3; Channel Type:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:190mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; Gate Source Threshold Voltage Max:2V RoHS Compliant: Yes
MOSFET P-CH 60V 190MA SC75A
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 028328-SI1021R-T1-GE3 | SI1021R-T1-GE3 | SI1021R-T1-GE3CT-ND | 278-SI1021R-T1-GE3 | SI1021R-T1-GE3 | 97W2616 | 69W7170 | SI1021R-T1-GE3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1021R-T1-GE3 | Single FETs, MOSFETs | Single FETs, MOSFETs | SMD -60V 190mA MOSFET Transistor | MOSFET | Mosfet, P-Ch, 60V, 0.19A, 150Deg C/0.25W; Channel Type Vishay | Mosfet, P Channel, -60V, -190Ma, Sot-416-3; Channel Type Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | |||
| V(BR)DSS | 60 volts | 60 volts | ||||||
| PD | 250 milliwatts | 250 milliwatts | 250 milliwatts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) |
