2-Ch N/P-Ch JFET, 20V, 370mA, 700mR, SOT-563 Product overview: SI1016X-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 370mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 370mA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1016X-T1-GE3 can be used for catalog matching and distributor lookup.
MOSFET N/P-CH 20V SC89-6
Mosfet Array N and P-Channel 20V 485mA, 370mA 250mW Surface Mount SC-89 (SOT-563F)
Mosfet Array N and P-Channel 20V 485mA, 370mA 250mW Surface Mount SC-89 (SOT-563F)
Mosfet Array N and P-Channel 20V 485mA, 370mA 250mW Surface Mount SC-89 (SOT-563F)
MOSFET N/P-Ch MOSFET 700/1200 mohms@4.5V
MOSFET, N AND P CHANNEL, 20V, 0.41OHM, 485mA, SOT-563, FULL REEL; Transistor Polarity:Complementa
DUAL N/P CHANNEL MOSFET, 20V, SC-89; Transistor Polarity:Complementa
MOSFET N/P-CH 20V 0.485A SC89
| ERSAELECTRONICS PTE. LTD. | ODG (Origin Data Global) | DigiKey | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 278-SI1016X-T1-GE3 | SI1016X-T1-GE3 | SI1016X-T1-GE3TR-ND | SI1016X-T1-GE3 | 73W9405 | SI1016X-T1-GE3 |
| Product Name | 20V 370mA MOSFET Transistor | FET, MOSFET Arrays | FET, MOSFET Arrays | MOSFET | Mosfet, N And P Channel, 20V, 0.41Ohm, 485Ma, Sot-563, Full Reel; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; P-Channel | P-Channel; N and P-Channel | P-Channel | |||
| PD | 250 milliwatts | |||||
| TJ | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) | ||||
| Transistor Technology / Material | MOSFET (Metal Oxide) | |||||
| V(BR)DSS | 20 volts |
