Vishay Intertechnology, Inc. FET, MOSFET Arrays SI1016X-T1-E3

Description
Mosfet Array N and P-Channel 20V 485mA, 370mA 250mW Surface Mount SC-89 (SOT-563F)
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Description
Mosfet Array N and P-Channel 20V 485mA, 370mA 250mW Surface Mount SC-89 (SOT-563F)
Request a Quote Datasheet

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FET, MOSFET Arrays - SI1016X-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
SI1016X-T1-E3TR-ND
FET, MOSFET Arrays SI1016X-T1-E3TR-ND
Mosfet Array N and P-Channel 20V 485mA, 370mA 250mW Surface Mount SC-89 (SOT-563F)

Mosfet Array N and P-Channel 20V 485mA, 370mA 250mW Surface Mount SC-89 (SOT-563F)

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1016X-T1-E3 - 103360-SI1016X-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1016X-T1-E3
103360-SI1016X-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1016X-T1-E3 103360-SI1016X-T1-E3
Manufacturer: Vishay Win Source Part Number: 103360-SI1016X-T1-E3 Packaging: Reel - TR Mounting: SMD (SMT) FET Type: N and P-Channel FET Feature: Logic Level Gate Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-89-6 Maximum Power Dissipation: 250mW Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 485mA, 370mA Gate-Source Threshold Voltage: 1V @ 250μA Max Gate Charge: 0.75nC @ 4.5V Maximum Rds On at Id,Vgs: 700 mOhm @ 600mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 103360-SI1016X-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-89-6
Maximum Power Dissipation: 250mW
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 485mA, 370mA
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 0.75nC @ 4.5V
Maximum Rds On at Id,Vgs: 700 mOhm @ 600mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI1016X-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI1016X-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI1016X-T1-E3
MOSFET N/P-CH 20V 0.485A SC89

MOSFET N/P-CH 20V 0.485A SC89

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI1016X-T1-E3TR-ND 103360-SI1016X-T1-E3 SI1016X-T1-E3
Product Name FET, MOSFET Arrays TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1016X-T1-E3 Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Package Type SOT-563, SOT-666 SOT3; SC-89-6
Polarity P-Channel
V(BR)DSS 20 volts
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