The Vishay MOSFET, part number 64T4049, is a complementary N- and P-channel device with a maximum drain-source voltage of 20V. It features a low on-resistance of 0.396Oc at a gate-source voltage of 4.5V for the N-channel and 0.756Oc for the P-channel under similar conditions. The continuous drain current rating is 600mA for both channels, with a pulsed drain current capability of 2A for the N-channel and -1.5A for the P-channel. The device is suitable for high-speed switching applications and is designed for low-voltage operation, making it ideal for battery-operated and portable systems. It also includes ESD protection rated at 900V for both channels. The MOSFET is housed in a compact SOT563F package, which is lead-free and halogen-free, complying with RoHS standards.
Mosfet Array N and P-Channel 20V 220mW Surface Mount SC-89 (SOT-563F)
Mosfet Array N and P-Channel 20V 220mW Surface Mount SC-89 (SOT-563F)
Mosfet Array N and P-Channel 20V 220mW Surface Mount SC-89 (SOT-563F)
MOSFET N/P-CH 20V SC89-6
2-Ch N/P-Ch JFET, 20V, 600mA, SOT-563 Product overview: SI1016CX-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 600mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 600mA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1016CX-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 028326-SI1016CX-T1-G
Packaging: Reel - TR
Mounting: SMD (SMT)
FET Type: N and P-Channel
FET Feature: Logic Level Gate
Family Name: Si1016CX
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-89-6
Maximum Power Dissipation: 220mW
Drain-Source Breakdown Voltage: 20V
Gate-Source Threshold Voltage: 1V @ 250μA
Max Gate Charge: 2nC @ 4.5V
Max Input Capacitance: 43pF @ 10V
Maximum Rds On at Id,Vgs: 396 mOhm @ 500mA, 4.5V
Alternative Parts (Cross-Reference): CMLDM3757 TR Lead Free; NTZD3155CT1H; CMLDM3757 TR Tin/Lead; CMLDM3757;
Introduction Date: April 11, 2011
ECCN: EAR99
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
MOSFET, NP CHANNEL, 20V, W DIODE, SOT563F; Transistor Polarity:N and P Channel; Continuous Drain Current Id:600mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.33ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:220mWRoHS Compliant: Yes
MOSFET N/P-CH 20V SC89
MOSFET 20V Vds 8V Vgs SC89-6 N&P PAIR
| DigiKey | ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI1016CX-T1-GE3TR-ND | SI1016CX-T1-GE3 | 278-SI1016CX-T1-GE3 | 028326-SI1016CX-T1-GE3 | 64T4049 | SI1016CX-T1-GE3 | SI1016CX-T1-GE3 |
| Product Name | FET, MOSFET Arrays | FET, MOSFET Arrays | 20V 600mA MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1016CX-T1-GE3 | Mosfet, Np Channel, 20V, W Diode, Sot563F; Transistor Polarity Vishay | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Package Type | SOT-563, SOT-666 | SOT-563, SOT-666 | SOT3; SC-89-6 | TO-3 | |||
| Polarity | P-Channel; N and P-Channel | N-Channel; P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 20 volts | 20 volts | |||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 C (-67 F) | -55 to 150 C (-67 to 302 F) |
