Manufacturer: Vishay
Win Source Part Number: 098616-SI1013X-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 250mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-89-3
Dimension: SC-89, SOT-490
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 350mA (Ta)
Gate-Source Threshold Voltage: 450mV @ 250μA (Min)
Max Gate Charge: 1.5nC @ 4.5V
Maximum Gate-Source Voltage: ±6V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 350mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Sufficient
MOSFET P-CH 20V 350MA SC89-3
P-Channel 20V 350mA (Ta) 250mW (Ta) Surface Mount SC-89-3
MOSFET P-CH 20V 350MA SC89-3 Product overview: SI1013X-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 350MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 350MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1013X-T1-E3 can be used for catalog matching and distributor lookup.
MOSFET P-CH 20V 350MA SC89-3
MOSFET P-CH 20V 350MA SC89-3
| Win Source Electronics | ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 098616-SI1013X-T1-E3 | SI1013X-T1-E3 | SI1013X-T1-E3TR-ND | 278-SI1013X-T1-E3 | 880-SI1013X-T1-E3 | SI1013X-T1-E3 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1013X-T1-E3 | Single FETs, MOSFETs | Single FETs, MOSFETs | 20V 350MA MOSFET Transistor | MOSFET P-CH 20V 350MA SC89-3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel; P-Channel | P-Channel; P-Channel | P-Channel | |||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | |||
| PD | 250 milliwatts | 250 milliwatts | 250 milliwatts | 250 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | ||
| Package Type | SOT3; SC-89-3 | SC-89, SOT-490 | SC-89, SOT-490 | Tape & Reel (TR) | SC-89, SOT-490 |