MOSFET P-CH 20V 350MA SC75A
P-Channel JFET, 350mA, -20V, 1.2R, SOT-416 Product overview: SI1013R-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include P-Channel, 350mA, -20V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 350mA, -20V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1013R-T1-GE3 can be used for catalog matching and distributor lookup.
P-Channel 20V 350mA (Ta) 150mW (Ta) Surface Mount SC-75A
P-Channel 20V 350mA (Ta) 150mW (Ta) Surface Mount SC-75A
P-Channel 20V 350mA (Ta) 150mW (Ta) Surface Mount SC-75A
Manufacturer: Vishay
Win Source Part Number: 028324-SI1013R-T1-GE
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 150mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-75A
Dimension: SC-75A
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 350mA (Ta)
Gate-Source Threshold Voltage: 450mV @ 250μA (Min)
Max Gate Charge: 1.5nC @ 4.5V
Maximum Gate-Source Voltage: ±6V
Maximum Rds On at Id,Vgs: 1.2 Ohm @ 350mA, 4.5V
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Sufficient
MOSFET P-CH 20V 350MA SC75A
MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.8Ohm;ID -350mA;SC-75A (SOT-416);PD 150mW
20V 350mA 150mW 1.2Ω@4.5V,350mA 450mV@250uA P Channel SC-75A MOSFETs ROHS
MOSFET 20V 350mA 175mW 1.2 ohms @ 4.5V
MOSFET, P CHANNEL, -20V, -350mA, SOT-416-3; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:350mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:1.8V; Power Dissipation:150mW RoHS Compliant: Yes
P CH MOSFET, -20V, 350mA, SC-75A, FULL REEL; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:400mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:6V; Gate Source Threshold Voltage Max:450mVRoHS Compliant: Yes
MOSFET Transistor, P Channel, -350 mA, -20 V, 0.8 ohm, -1.8 V, -450 mV RoHS Compliant: Yes
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Allied Electronics, Inc. | LCSC Electronics Technology (HK) Limited | VAST STOCK CO., LIMITED | Newark, An Avnet Company | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI1013R-T1-GE3 | 278-SI1013R-T1-GE3 | SI1013R-T1-GE3TR-ND | 028324-SI1013R-T1-GE3 | SI1013R-T1-GE3 | 70026087 | SI1013R-T1-GE3 | SI1013R-T1-GE3 | 69W7169 | 16P3670 | 97W2615 |
| Product Name | Single FETs, MOSFETs | P-Channel 350mA -20V MOSFET Transistor | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1013R-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET, Power;P-Ch;VDSS -20V;RDS(ON) 0.8Ohm;ID -350mA;SC-75A (SOT-416);PD 150mW | Triode/MOS Tube/Transistor >> MOSFETs | MOSFET | Mosfet, P Channel, -20V, -350Ma, Sot-416-3; Channel Type Vishay | P Ch Mosfet, -20V, 350Ma, Sc-75A, Full Reel; Channel Type Vishay | Mosfet Transistor, P Channel, -350 Ma, -20 V, 0.8 Ohm, -1.8 V, -450 Mv Rohs Compliant Vishay |
| Polarity | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel; P-Channel | P-Channel | P-Channel | P-Channel | P-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||||||
| V(BR)DSS | 20 volts | 20 volts | 20 volts | ||||||||
| IDSS | 350 milliamps | 350 milliamps | 400 milliamps | ||||||||
| PD | 150 milliwatts | 150 milliwatts | 150 milliwatts | 150 milliwatts | 150 milliwatts | 150 milliwatts |
