MOSFET N-CH 20V 500MA SC89-3
N-Channel 20V 500mA (Ta) 250mW (Ta) Surface Mount SC-89-3
N-Channel 20V 500mA (Ta) 250mW (Ta) Surface Mount SC-89-3
N-Channel 20V 500mA (Ta) 250mW (Ta) Surface Mount SC-89-3
N-Channel JFET, 20V, 500mA, 700mR Rds(on), SC-89 Product overview: SI1012X-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20V, 500mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 500mA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1012X-T1-GE3 can be used for catalog matching and distributor lookup.
Manufacturer: Vishay
Win Source Part Number: 028323-SI1012X-T1-GE
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 250mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-89-3
Dimension: SC-89, SOT-490
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 500mA (Ta)
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 0.75nC @ 4.5V
Maximum Gate-Source Voltage: ±6V
Maximum Rds On at Id,Vgs: 700 mOhm @ 600mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 20V 500MA SC89-3
N CHANNEL MOSFET, 20V, 500mA, SC-89; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:600mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:6V; Gate Source Threshold Voltage Max:900mV RoHS Compliant: Yes
MOSFET 20V 0.6A 175mW 700mohm @ 4.5V
| ODG (Origin Data Global) | DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | SI1012X-T1-GE3 | SI1012X-T1-GE3TR-ND | 278-SI1012X-T1-GE3 | 028323-SI1012X-T1-GE3 | SI1012X-T1-GE3 | 16P3669 | SI1012X-T1-GE3 |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | N-Channel 20V 500mA MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1012X-T1-GE3 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | N Channel Mosfet, 20V, 500Ma, Sc-89; Channel Type Vishay | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel | N-Channel; N-Channel | N-Channel | ||
| Transistor Technology / Material | MOSFET (Metal Oxide) | ||||||
| V(BR)DSS | 20 volts | 20 volts | |||||
| IDSS | 500 milliamps | 600 milliamps |
