Vishay Precision Group Single FETs, MOSFETs SI1012X-T1-GE3

Description
MOSFET N-CH 20V 500MA SC89-3
Request a Quote Datasheet
Description
MOSFET N-CH 20V 500MA SC89-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI1012X-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI1012X-T1-GE3
Single FETs, MOSFETs SI1012X-T1-GE3
MOSFET N-CH 20V 500MA SC89-3

MOSFET N-CH 20V 500MA SC89-3

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1012X-T1-GE3 - 028323-SI1012X-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1012X-T1-GE3
028323-SI1012X-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1012X-T1-GE3 028323-SI1012X-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028323-SI1012X-T1-GE 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 250mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-89-3 Dimension: SC-89, SOT-490 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 500mA (Ta) Gate-Source Threshold Voltage: 900mV @ 250μA Max Gate Charge: 0.75nC @ 4.5V Maximum Gate-Source Voltage: ±6V Maximum Rds On at Id,Vgs: 700 mOhm @ 600mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 028323-SI1012X-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 250mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-89-3
Dimension: SC-89, SOT-490
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 500mA (Ta)
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 0.75nC @ 4.5V
Maximum Gate-Source Voltage: ±6V
Maximum Rds On at Id,Vgs: 700 mOhm @ 600mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - SI1012X-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI1012X-T1-GE3TR-ND
Single FETs, MOSFETs SI1012X-T1-GE3TR-ND
N-Channel 20V 500mA (Ta) 250mW (Ta) Surface Mount SC-89-3

N-Channel 20V 500mA (Ta) 250mW (Ta) Surface Mount SC-89-3

Buy Now Datasheet
Single FETs, MOSFETs - SI1012X-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI1012X-T1-GE3CT-ND
Single FETs, MOSFETs SI1012X-T1-GE3CT-ND
N-Channel 20V 500mA (Ta) 250mW (Ta) Surface Mount SC-89-3

N-Channel 20V 500mA (Ta) 250mW (Ta) Surface Mount SC-89-3

Buy Now Datasheet
Single FETs, MOSFETs - SI1012X-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI1012X-T1-GE3DKR-ND
Single FETs, MOSFETs SI1012X-T1-GE3DKR-ND
N-Channel 20V 500mA (Ta) 250mW (Ta) Surface Mount SC-89-3

N-Channel 20V 500mA (Ta) 250mW (Ta) Surface Mount SC-89-3

Buy Now Datasheet
Singapore
N-Channel 20V 500mA MOSFET Transistor
278-SI1012X-T1-GE3
N-Channel 20V 500mA MOSFET Transistor 278-SI1012X-T1-GE3
N-Channel JFET, 20V, 500mA, 700mR Rds(on), SC-89 Product overview: SI1012X-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20V, 500mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 500mA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1012X-T1-GE3 can be used for catalog matching and distributor lookup.

N-Channel JFET, 20V, 500mA, 700mR Rds(on), SC-89 Product overview: SI1012X-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20V, 500mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 500mA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1012X-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI1012X-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI1012X-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI1012X-T1-GE3
MOSFET N-CH 20V 500MA SC89-3

MOSFET N-CH 20V 500MA SC89-3

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 20V 0.6A 175mW 700mohm @ 4.5V

MOSFET 20V 0.6A 175mW 700mohm @ 4.5V

Buy Now Datasheet
N Channel Mosfet, 20V, 500Ma, Sc-89; Channel Type Vishay - 16P3669 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 20V, 500Ma, Sc-89; Channel Type Vishay
16P3669
N Channel Mosfet, 20V, 500Ma, Sc-89; Channel Type Vishay 16P3669
N CHANNEL MOSFET, 20V, 500mA, SC-89; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:600mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:6V; Gate Source Threshold Voltage Max:900mV RoHS Compliant: Yes

N CHANNEL MOSFET, 20V, 500mA, SC-89; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:600mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:6V; Gate Source Threshold Voltage Max:900mV RoHS Compliant: Yes

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED Newark, An Avnet Company
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number SI1012X-T1-GE3 028323-SI1012X-T1-GE3 SI1012X-T1-GE3TR-ND 278-SI1012X-T1-GE3 SI1012X-T1-GE3 SI1012X-T1-GE3 16P3669
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1012X-T1-GE3 Single FETs, MOSFETs N-Channel 20V 500mA MOSFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N Channel Mosfet, 20V, 500Ma, Sc-89; Channel Type Vishay
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 20 volts 20 volts
IDSS 500 milliamps 600 milliamps
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