Vishay Precision Group Single FETs, MOSFETs SI1012X-T1-GE3

Description
MOSFET N-CH 20V 500MA SC89-3
Request a Quote Datasheet
Description
MOSFET N-CH 20V 500MA SC89-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - SI1012X-T1-GE3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI1012X-T1-GE3
Single FETs, MOSFETs SI1012X-T1-GE3
MOSFET N-CH 20V 500MA SC89-3

MOSFET N-CH 20V 500MA SC89-3

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1012X-T1-GE3 - 028323-SI1012X-T1-GE3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1012X-T1-GE3
028323-SI1012X-T1-GE3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1012X-T1-GE3 028323-SI1012X-T1-GE3
Manufacturer: Vishay Win Source Part Number: 028323-SI1012X-T1-GE 3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 250mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-89-3 Dimension: SC-89, SOT-490 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 500mA (Ta) Gate-Source Threshold Voltage: 900mV @ 250μA Max Gate Charge: 0.75nC @ 4.5V Maximum Gate-Source Voltage: ±6V Maximum Rds On at Id,Vgs: 700 mOhm @ 600mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 34 pct. Supply and Demand Status: Sufficient

Manufacturer: Vishay
Win Source Part Number: 028323-SI1012X-T1-GE3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 250mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-89-3
Dimension: SC-89, SOT-490
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 500mA (Ta)
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 0.75nC @ 4.5V
Maximum Gate-Source Voltage: ±6V
Maximum Rds On at Id,Vgs: 700 mOhm @ 600mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 34 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - SI1012X-T1-GE3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI1012X-T1-GE3TR-ND
Single FETs, MOSFETs SI1012X-T1-GE3TR-ND
N-Channel 20V 500mA (Ta) 250mW (Ta) Surface Mount SC-89-3

N-Channel 20V 500mA (Ta) 250mW (Ta) Surface Mount SC-89-3

Buy Now Datasheet
Single FETs, MOSFETs - SI1012X-T1-GE3CT-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI1012X-T1-GE3CT-ND
Single FETs, MOSFETs SI1012X-T1-GE3CT-ND
N-Channel 20V 500mA (Ta) 250mW (Ta) Surface Mount SC-89-3

N-Channel 20V 500mA (Ta) 250mW (Ta) Surface Mount SC-89-3

Buy Now Datasheet
Single FETs, MOSFETs - SI1012X-T1-GE3DKR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI1012X-T1-GE3DKR-ND
Single FETs, MOSFETs SI1012X-T1-GE3DKR-ND
N-Channel 20V 500mA (Ta) 250mW (Ta) Surface Mount SC-89-3

N-Channel 20V 500mA (Ta) 250mW (Ta) Surface Mount SC-89-3

Buy Now Datasheet
Singapore
N-Channel 20V 500mA MOSFET Transistor
278-SI1012X-T1-GE3
N-Channel 20V 500mA MOSFET Transistor 278-SI1012X-T1-GE3
N-Channel JFET, 20V, 500mA, 700mR Rds(on), SC-89 Product overview: SI1012X-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20V, 500mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 500mA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1012X-T1-GE3 can be used for catalog matching and distributor lookup.

N-Channel JFET, 20V, 500mA, 700mR Rds(on), SC-89 Product overview: SI1012X-T1-GE3 from Vishay is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include N-Channel, 20V, 500mA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 500mA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1012X-T1-GE3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
N Channel Mosfet, 20V, 500Ma, Sc-89; Channel Type Vishay - 16P3669 - Newark, An Avnet Company
Chicago, IL, United States
N Channel Mosfet, 20V, 500Ma, Sc-89; Channel Type Vishay
16P3669
N Channel Mosfet, 20V, 500Ma, Sc-89; Channel Type Vishay 16P3669
N CHANNEL MOSFET, 20V, 500mA, SC-89; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:600mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:6V; Gate Source Threshold Voltage Max:900mV RoHS Compliant: Yes

N CHANNEL MOSFET, 20V, 500mA, SC-89; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:600mA; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:6V; Gate Source Threshold Voltage Max:900mV RoHS Compliant: Yes

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 20V 0.6A 175mW 700mohm @ 4.5V

MOSFET 20V 0.6A 175mW 700mohm @ 4.5V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI1012X-T1-GE3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI1012X-T1-GE3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI1012X-T1-GE3
MOSFET N-CH 20V 500MA SC89-3

MOSFET N-CH 20V 500MA SC89-3

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number SI1012X-T1-GE3 028323-SI1012X-T1-GE3 SI1012X-T1-GE3TR-ND 278-SI1012X-T1-GE3 16P3669 SI1012X-T1-GE3 SI1012X-T1-GE3
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1012X-T1-GE3 Single FETs, MOSFETs N-Channel 20V 500mA MOSFET Transistor N Channel Mosfet, 20V, 500Ma, Sc-89; Channel Type Vishay MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 20 volts 20 volts
IDSS 500 milliamps 600 milliamps
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