Vishay Intertechnology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1012X-T1-E3 SI1012X-T1-E3

Description
Manufacturer: Vishay Win Source Part Number: 119917-SI1012X-T1-E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 250mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-89-3 Dimension: SC-89, SOT-490 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 500mA (Ta) Gate-Source Threshold Voltage: 900mV @ 250μA Max Gate Charge: 0.75nC @ 4.5V Maximum Gate-Source Voltage: ±6V Maximum Rds On at Id,Vgs: 700 mOhm @ 600mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Vishay Win Source Part Number: 119917-SI1012X-T1-E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 250mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-89-3 Dimension: SC-89, SOT-490 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 500mA (Ta) Gate-Source Threshold Voltage: 900mV @ 250μA Max Gate Charge: 0.75nC @ 4.5V Maximum Gate-Source Voltage: ±6V Maximum Rds On at Id,Vgs: 700 mOhm @ 600mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1012X-T1-E3 - 119917-SI1012X-T1-E3 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1012X-T1-E3
119917-SI1012X-T1-E3
TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1012X-T1-E3 119917-SI1012X-T1-E3
Manufacturer: Vishay Win Source Part Number: 119917-SI1012X-T1-E3 Packaging: Reel - TR Mounting: SMD (SMT) Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 250mW (Ta) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Status: Obsolete(EOL) Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: SC-89-3 Dimension: SC-89, SOT-490 Drain-Source Breakdown Voltage: 20V Continuous Drain Current at 25°C: 500mA (Ta) Gate-Source Threshold Voltage: 900mV @ 250μA Max Gate Charge: 0.75nC @ 4.5V Maximum Gate-Source Voltage: ±6V Maximum Rds On at Id,Vgs: 700 mOhm @ 600mA, 4.5V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance

Manufacturer: Vishay
Win Source Part Number: 119917-SI1012X-T1-E3
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 250mW (Ta)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Status: Obsolete(EOL)
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: SC-89-3
Dimension: SC-89, SOT-490
Drain-Source Breakdown Voltage: 20V
Continuous Drain Current at 25°C: 500mA (Ta)
Gate-Source Threshold Voltage: 900mV @ 250μA
Max Gate Charge: 0.75nC @ 4.5V
Maximum Gate-Source Voltage: ±6V
Maximum Rds On at Id,Vgs: 700 mOhm @ 600mA, 4.5V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single FETs, MOSFETs - SI1012X-T1-E3 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
SI1012X-T1-E3
Single FETs, MOSFETs SI1012X-T1-E3
MOSFET N-CH 20V 500MA SC89-3

MOSFET N-CH 20V 500MA SC89-3

Supplier's Site Datasheet
Singapore
20V 500MA MOSFET Transistor
278-SI1012X-T1-E3
20V 500MA MOSFET Transistor 278-SI1012X-T1-E3
MOSFET N-CH 20V 500MA SC89-3 Product overview: SI1012X-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 500MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 500MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1012X-T1-E3 can be used for catalog matching and distributor lookup.

MOSFET N-CH 20V 500MA SC89-3 Product overview: SI1012X-T1-E3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 20V, 500MA. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 20V, 500MA, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1012X-T1-E3 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - SI1012X-T1-E3TR-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
SI1012X-T1-E3TR-ND
Single FETs, MOSFETs SI1012X-T1-E3TR-ND
N-Channel 20V 500mA (Ta) 250mW (Ta) Surface Mount SC-89-3

N-Channel 20V 500mA (Ta) 250mW (Ta) Surface Mount SC-89-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - SI1012X-T1-E3 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
SI1012X-T1-E3
Discrete Semiconductor Products - Transistors - FETs, MOSFETs SI1012X-T1-E3
MOSFET N-CH 20V 500MA SC89-3

MOSFET N-CH 20V 500MA SC89-3

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number 119917-SI1012X-T1-E3 SI1012X-T1-E3 278-SI1012X-T1-E3 SI1012X-T1-E3TR-ND SI1012X-T1-E3
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - SI1012X-T1-E3 Single FETs, MOSFETs 20V 500MA MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 20 volts 20 volts
PD 250 milliwatts 250 milliwatts 250 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
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