Vishay Intertechnology, Inc. Single FETs, MOSFETs SI1011X-T1-GE3

P-Channel 12V 480mA (Ta) 190mW (Ta) Surface Mount SC-89-3

MOSFET P-CH 12V SC89-3 Product overview: SI1011X-T1-GE3 from Vishay / Siliconix is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 12V. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 12V, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-SI1011X-T1-GE3 can be used for catalog matching and distributor lookup.

Manufacturer: Vishay Siliconix
Win Source Part Number: 800984-SI1011X-T1-GE3
Packaging: Reel
Mounting Style: SMD
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 12V
Part Status: Obsolete (End Of Life)
Supplier Device Package: SC-89-3
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Temperature Range - Operating: -55°C ~ 150°C
Manufacturer Package: SC-89, SOT-490
Power Dissipation (Maximum): 190mW
Popularity: High
Fake Threat In the Open Market: 55 pct.
Supply and Demand Status: Sufficient
Manufacturer Pack Quantity: 3,000
MSL Level: 1 (Unlimited)
Rds On (Maximum) at Id, Vgs: 640mOhm at 400mA, 4.5V
Gate Charge (Qg) (Maximum) at Vgs: 4nC at 4.5V
Input Capacitance (Ciss) (Maximum) at Vds: 62pF at 6V
Vgs(th) (Maximum) at Id: 800mV at 250μA
Maximum Vgs: ±5V