Vishay Precision Group UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET S982TGS08

Datasheet

Suppliers

Company
Product
Description
Supplier Links
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET - S982TGS08 - Karl Kruse GmbH & Co. KG
Kaarst, Germany
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
S982TGS08
UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET S982TGS08
Karl KruseĀ is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951. We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost. With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Karl Kruse is a worldwide leading franchised distributor (ISO: 9001-2008 certified). A service provider specializing in the supply and material management of electronic components, since 1951.
We are an innovative company who is dedicated to collaborating with customers and partners to develop and produce solutions that reduce your cost.
With innovativeness, a clear commitment to quality, and extensive technological expertise we work side by side with our customers along the entire value-creation chain,supporting them as an expert partner in development and solution creation.

Supplier's Site Datasheet

Technical Specifications

  Karl Kruse GmbH & Co. KG
Product Category RF Transistors
Product Number S982TGS08
Product Name UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
Polarity N-Channel
Unlock Full Specs
to access all available technical data

Similar Products

DC - 3.2 GHz, 125 Watt, 50 Volt GaN RF Power Transistor - QPD1008L - Qorvo
Specs
Transistor Technology / Material GaN
Transistor Grade / Operating Range Military
Package Type NI-360
View Details
2 suppliers
Automotive MOSFET - IAUA250N04S6N005 - Infineon Technologies AG
Specs
Polarity N-Channel; N
Transistor Technology / Material Si/SiC
VGS(off) 2.2 to 3 volts
View Details
GaN S-Band Radar Transistor - IGN3135L12 - Integra Technologies, Inc.
Specs
Transistor Technology / Material GaN
Output Power 12 watts
Power Gain 16 dB
View Details
Bipolar RF Transistors -  - Northrop Grumman Corporation
Northrop Grumman Corporation
Specs
Transistor Grade / Operating Range Military
Transistor Technology / Material SiC
IC(max) 18000 milliamps
View Details