Vishay Intertechnology, Inc. Single FETs, MOSFETs MXPQ120A080SL-GE3

The MXPQ120A080SL-GE3 is a 1200 V N-channel Silicon Carbide (SiC) MOSFET in a TO-247AD 4L package, designed for automotive on-board chargers, DC/DC converters in EV/HEV systems, and EV charging applications. It has a typical on-state resistance of 80 mΩ at 25 °C and 18 V gate-source voltage, with a continuous drain current rating of 31 A and a maximum power dissipation of 174 W. The device features a short-circuit withstand time of 3 μs and is AEC-Q101 qualified. The package has a junction-to-case thermal resistance of 0.86 °C/W and operates over a junction and storage temperature range of -55 °C to +175 °C. The part is lead-free and halogen-free.