Vishay Intertechnology, Inc. Single FETs, MOSFETs MXPQ120A063SL-GE3

The MXPQ120A063SL-GE3 is a 1200 V N-channel SiC MOSFET in a TO-247AD 4L package with dimensions of 23.30 to 23.60 mm in length and 15.75 to 16.13 mm in width, designed for automotive on-board chargers, DC/DC converters, and EV charging systems. It features a typical on-state resistance of 63 mΩ at 25 °C, a continuous drain current of 39 A, and a short-circuit withstand time of 3 μs. The device is AEC-Q101 qualified, operates with a junction temperature range of -55 °C to +175 °C, and has a maximum junction-to-case thermal resistance of 0.73 °C/W. The package is lead-free and halogen-free.