Vishay Intertechnology, Inc. Single FETs, MOSFETs MXPQ120A045SW-GE3

MXPQ120A045SW-GE3 is a 1200 V N-channel SiC MOSFET in a TO-247AD 3L package, designed for automotive on-board chargers and DC/DC converters in EV/HEV systems. It has a typical drain-source on-state resistance of 45 mΩ at 25 °C and a continuous drain current rating of 51 A. The device features a short-circuit withstand time of 3 μs, a maximum junction-to-case thermal resistance of 0.59 °C/W, and operates from -55 °C to +175 °C. It is AEC-Q101 qualified and meets RoHS standards.